SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES - FZT957 - FZT857
FZT958 - N/A
PARTMARKING DETAILS - DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT957 FZT958 UNIT
Collector-Base Voltage V
CBO
-300 -400 V
Collector-Emitter Voltage V
CEO
-300 -400 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Current I
CM
-2 -1.5 A
Continuous Collector Current I
C
-1 -0.5 A
Power Dissipation at T
amb
=25°C P
tot
3W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT957
FZT958
C
C
E
B
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