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FZT958TA

P1-P3P4-P5
FZT958
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400 -600 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-400 -600 V
I
C
=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-400 -550 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-6 -8 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-50
-1
nA
µA
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
Collector Cut-Off Current I
CER
R ≤1kΩ
-50
-1
nA
µA
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
I
C
=-10mA, I
B
=-1mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-830 -950 mV I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-725 -840 mV I
C
=-500mA, V
CE
=-10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
10
200
200
20
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency f
T
85 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
19 pF V
CB
=-20V, f=1MHz
Switching Times t
on
t
off
104
2400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 292
FZT958
3 - 293
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I -
Collector Current (Amps)
V
- (
V
ol
ts
)
V
CE(sat)
v I
C
I -
Collector Current (Amps)
V
- (
V
ol
ts
)
I - Collector Current (Amps) I - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I -
Collector Current (Amps)
V
BE(on)
v I
C
h
- Nor
mali
sed G
ain
V
- (
V
ol
ts
)
V
- (
V
ol
ts
)
h - Typical Gain
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
µ
0.01
1000
FZT958
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400 -600 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-400 -600 V
I
C
=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-400 -550 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-6 -8 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-50
-1
nA
µA
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
Collector Cut-Off Current I
CER
R ≤1kΩ
-50
-1
nA
µA
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
I
C
=-10mA, I
B
=-1mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-830 -950 mV I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-725 -840 mV I
C
=-500mA, V
CE
=-10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
10
200
200
20
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency f
T
85 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
19 pF V
CB
=-20V, f=1MHz
Switching Times t
on
t
off
104
2400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 292
FZT958
3 - 293
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I -
Collector Current (Amps)
V
- (
V
ol
ts
)
V
CE(sat)
v I
C
I -
Collector Current (Amps)
V
- (
V
ol
ts
)
I - Collector Current (Amps) I - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I -
Collector Current (Amps)
V
BE(on)
v I
C
h
- Nor
mali
sed G
ain
V
- (
V
ol
ts
)
V
- (
V
ol
ts
)
h - Typical Gain
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
µ
0.01
1000
P1-P3P4-P5

FZT958TA

Mfr. #:
Buy FZT958TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP HighCt HighV
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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