LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
DESCRIPTION
The LX5560 is a low noise amplifier
(LNA) for WLAN applications in the
4.9-6.0 GHz frequency range. This
LNA is manufactured with an InGaAs
Enhancement mode pseudomorphic
HEMT (E-pHEMT) process.
It operates with a single positive
voltage supply of 3.3V, with noise
figure(NF) of 1.7dB while maintaining
input third order intercept point(IIP3)
of up to +6dBm.
The LNA is implemented with bias
circuit and input matching circuit on
chip, resulting in simple external
circuit. In addition, the on-chip bias
circuit provides stable performance of
gain, NF and current for voltage
variation compared to a general
resistor-network bias circuit.
The LX5560 is available in a 12-pin
2mmx2mm micro-lead package(MLPQ-
12L).
BLOCK DIAGRAM
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
0.5µm InGaAs E-mode pHEMT
4.9 - 6GHz Operation
Single 3.3V Supply
Gain ~ 12dB
Noise Figure ~ 1.7dB
Input IP3 ~ +6dBm
Input P1dB ~ +2dBm
On-Chip Bias Circuit
On-Chip Input Match
Simple Output Match
2x2mm² MLPQ 12 Pin
Low Profile 0.5mm
APPLICATIONS
Wireless LAN 802.11a
WiMax
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5560LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5560LL-TR)
Input
Match
Bias
Circuit
RF
Output
RF
Input
Vdd
Input
Match
Bias
Circuit
RF
Output
RF
Input
Vdd
L
L
X
X
5
5
5
5
6
6
0
0
•
560
645