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LX5560LL-TR

P1-P3P4-P6P7-P8
LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
S-PARAMETER
GAIN OVER TEMP
-40
-30
-20
-10
0
10
20
01234567
Frequency (GHz)
S11, S12, S21, S22 (dB)
S11 S12 S21 S22
Typical S-Parameter Data at Room Temperature
(Vdd = 3.3V, Idd = 9.5mA at Room Temperature)
3.0V 3.3V 3.6V
9
10
11
12
13
14
15
4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6
Frequency (GHz)
S21 (dB)
-40°C
+25°C
+85°C
NOISE FIGURE OVER TEMP
CURRENT OVER TEMP
3.0V 3.3V 3.6V
0.5
1
1.5
2
2.5
4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6
Frequency (GHz)
Noise Figure (dB)
-40°C
+25°C
+85°C
5
6
7
8
9
10
11
12
13
14
15
3 3.13.23.33.43.53.6
Vdd (V)
Idd (mA)
-40°C +25°C +85°C
INPUT P1DB (+25° C)
INPUT IP3 (+25° C)
0
1
2
3
4
5
4.9 5 5.15.25.35.45.55.65.75.85.9 6
Frequency (GHz)
IP1dB (dBm)
3.0V 3.3V 3.6V
3
4
5
6
7
8
9
10
11
12
4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6
Frequency (GHz)
IIP3 (dBm)
3.0V 3.3V 3.6V
C
C
H
H
A
A
R
R
T
T
S
S
LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
POWER SWEEP @ 5.5GHz
-15
-10
-5
0
5
10
15
20
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
Pin (dBm)
Pout (dBm), Gain (dB)
0
5
10
15
20
25
30
35
Idd (mA)
Pout Gain Idd
(Vdd=3.3V, Idq=9.5mA at Room Temperature)
C
C
H
H
A
A
R
R
T
T
S
S
LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
APPLICATION SCHEMATIC
BOM LIST
Reference Designator Part Description Case
C1 Capacitor, 1 pF 0402
C2 Capacitor,1 µF 0603
C3 Capacitor,10 µF 0805
L1 Inductor, 1.5 nH (TOKO : LL1005-FH1N5S) 0402
R1 Resistor, 30 Ohm 0402
NOTES
It is recommended to place C1 at ~30mil from MLP package outline.
It is recommended to place L1 at ~30mil from MLP package outline.
C2 and C3 are used for standalone evaluation board test only. They can be replaced with a 1nF(0402) in final applications.
A
A
P
P
P
P
L
L
I
I
C
C
A
A
T
T
I
I
O
O
N
N
S
S
P1-P3P4-P6P7-P8

LX5560LL-TR

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Manufacturer:
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Description:
RF Amplifier LX5560LL-TR
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