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VS-GT105NA120UX

P1-P3P4-P6P7-P9
VS-GT105NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-16
1
Document Number: 95854
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
• Very low V
CE(on)
• Square RBSOA
•HEXFRED
®
clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance (d 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 100 A at 71 °C
V
CE(on)
typical at 100 A, 25 °C 2.45 V
Package SOT-227
Circuit High side switch
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 134
A
T
C
= 80 °C 92
Pulsed collector current I
CM
270
Clamped inductive load current I
LM
270
Diode continuous forward current I
F
T
C
= 25 °C 87
T
C
= 80 °C 59
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 360
Gate to emitter voltage V
GE
± 30 V
Power dissipation, IGBT P
D
T
C
= 25 °C 463
W
T
C
= 80 °C 260
Power dissipation, diode P
D
T
C
= 25 °C 338
T
C
= 80 °C 190
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
VS-GT105NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-16
2
Document Number: 95854
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A - 1.73 2.33
V
GE
= 15 V, I
C
= 100 A - 2.26 -
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.02 -
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.77 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 3.5 mA 4.6 5.8 8.0
Temperature coefficient of threshold voltage V
GE(th)
/'T
J
V
CE
= V
GE
, I
C
= 3.5 mA (25 °C to 125 °C) - -14.5 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 0.5 75 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.12 - mA
Diode reverse breakdown voltage V
BR
I
R
= 1 mA 1200 - - V
Diode forward voltage drop V
FM
I
F
= 50 A, V
GE
= 0 V - 2.65 3.55
V
I
F
= 100 A, V
GE
= 0 V - 3.5 -
I
F
= 50 A, V
GE
= 0 V, T
J
= 125 °C - 2.82 -
I
F
= 100 A, V
GE
= 0 V, T
J
= 125 °C - 3.9 -
Diode reverse leakage current I
RM
V
R
= 1200 V - 4 50 μA
T
J
= 125 °C, V
R
= 1200 V - 0.8 - mA
Gate to emitter leakage current I
GES
V
GE
= ± 30 V - - ± 600 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A, V
CC
= 600 V, V
GE
= 15 V
-400-
nCGate to emitter charge (turn-on) Q
ge
-120-
Gate to collector charge (turn-on) Q
gc
-170-
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 2.2 :
L = 500 μH
Energy losses
include tail and
diode recovery
-4.76-
mJ
Turn-off switching loss E
off
-3.64-
Total switching loss E
tot
-8.4-
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 2.2 :
L = 500 μH, T
J
= 125 °C
-6.88-
Turn-off switching loss E
off
-5.66-
Total switching loss E
tot
- 12.54 -
Turn-on delay time t
d(on)
-150-
ns
Rise time t
r
-55-
Turn-off delay time t
d(off)
-164-
Fall time t
f
-167-
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 270 A, R
g
= 22 :
V
GE
= 15 V to 0 V, V
CC
= 900 V, V
P
= 1200 V
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C, R
g
= 22 :V
GE
= 15 V to 0 V,
V
CC
= 900 V, V
P
= 1200 V
10 μs
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-129- ns
Diode peak reverse current I
rr
-11- A
Diode recovery charge Q
rr
-710- nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
-208- ns
Diode peak reverse current I
rr
-17- A
Diode recovery charge Q
rr
-1768- nC
VS-GT105NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-16
3
Document Number: 95854
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical IGBT Output Characteristics, V
GE
= 15 V
Fig. 2 - Typical IGBT Output Characteristics, T
J
= 125 °C
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-40 - 150 °C
Junction to case
IGBT
R
thJC
- - 0.27
°C/WDiode - - 0.37
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
0
25
50
75
100
125
150
175
200
0 1.0 2.0 3.0 4.0 5.0
I
C
(A)
V
CE
(V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
0
25
50
75
100
125
150
175
200
0 1.0 2.0 3.0 4.0 5.0
I
C
(A)
V
CE
(V)
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
V
GE
= 9 V
0
20
40
60
80
100
120
140
160
0 20406080100120140160
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
DC
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20 40 60 80 100 120 140 160
V
CE
(V)
T
J
(°C)
50 A
100 A
20 A
P1-P3P4-P6P7-P9

VS-GT105NA120UX

Mfr. #:
Buy VS-GT105NA120UX
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Output & SW Modules SOT-227 IGBT
Lifecycle:
New from this manufacturer.
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