VS-GT105NA120UX
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Vishay Semiconductors
Revision: 03-Nov-16
4
Document Number: 95854
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 7 - IGBT Reverse Bias SOA T
J
= 150 °C, V
GE
= 15 V
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical Diode Forward Characteristics
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
0
10
20
30
40
50
60
70
80
90
100
45678910
I
C
(A)
V
GE
(V)
T
J
= 25 °C
T
J
= 125 °C
V
CE
= 20 V
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
GEth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
1
10
100
1000
10 100 1000 10 000
I
C
(A)
V
CE
(V)
0.0001
0.001
0.01
0.1
1
100 300 500 700 900 1100 1300
I
CES
(mA)
V
CES
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
0
25
50
75
100
125
150
175
200
0 1.0 2.0 3.0 4.0 5.0 6.0
I
F
(A)
V
FM
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
0
20
40
60
80
100
120
140
160
0 20406080100
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
