Data Sheet AD9631/AD9632
Rev. D | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage (+V
S
to −V
S
) 12.6 V
Voltage Swing × Bandwidth Product 550 V × MHz
Internal Power Dissipation
PDIP (N) 1.3 W
SOIC (R) 0.9 W
Input Voltage (Common Mode) ±V
S
Differential Input Voltage ±1.2 V
Output Short Circuit Duration
Observe Power
Derating Curves
Storage Temperature Range −65°C to +125°C
Operating Temperature Range (A Grade) −40°C to +85°C
Lead Temperature Range (Soldering 10 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
METALLIZATION PHOTO
Figure 3. Dimensions shown in inches and (millimeters) Connect Substrate to −V
S
THERMAL RESISTANCE
Table 3.
Package Type
1
θ
JA
Unit
8-Lead PDIP (N) 90 °C/W
8-Lead SOIC (R) 140 °C/W
1
For device in free air.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these
devices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately 150°C. Exceeding this limit tempo-
rarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD9631 and AD9632 are internally short circuit
protected, this may not be sufficient to guarantee that the max-
imum junction temperature (150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves.
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
AD9631
AD9632
–IN
–IN
2
+V
S
7
6
OUT
2
+V
S
7
6
OUT
3
+IN
4
–V
S
3
+IN
4
–V
S
0.046
(1.17)
0.050 (1.27)
0.046
(1.17)
00601-003
2.0
0
0.5
1.0
1.5
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
MAXIMUM POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
8-LEAD SOIC PACKAGE
8-LEAD PDIP PACKAGE
T
J
= 150°C
00601-004
