APT77N60JC3 Datasheet APT77N60JC3 | P1-P3

050-7146 Rev H 3-2012

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOS

™

comprise a new family of transistors developed by Inﬁ neon Technologies AG. "COOLMOS" is a trade-

mark of Inﬁ neon Technologies AG"

APT77N60JC3

600V 77A 0.035Ω

STATIC ELECTRICAL CHARACTERISTICS

G

D

S

O

T

-

2

7

IS OTO P

®

file # E145592

"UL Recognized"

G

S

D

Super Junction MOSFET

Symbol Parameter APT77N60JC3 UNIT

V

DSS

Drain-Source Voltage 600 Volts

I

D

Continuous Drain Current @ T

C

= 25°C

1

77

Amps

I

DM

Pulsed Drain Current

2

231

V

GS

Gate-Source Voltage Continuous ±20 Volts

V

GSM

Gate-Source Voltage Transient ±30

P

D

Total Power Dissipation @ T

C

= 25°C

568 Watts

Linear Derating Factor 4.55 W/°C

T

J

,T

STG

Operating and Storage Junction Temperature Range -55 - to 150

°C

T

L

Lead Temperature: 0.063" from Case for 10 Sec. 300

dv

/

dt

Drain-Source Voltage slope (V

DS

= 400V, I

D

= 77A, T

J

= 125°C) 50 V/ns

I

AR

Avalanche Current

2

20 Amps

E

AR

Repetitive Avalanche Energy

3

1

mJ

E

AS

Single Pulse Avalanche Energy

180

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Ultra Low Gate Charge, Q

g

• Avalanche Energy Rated

• Extreme

dv

/

dt

Rated

• Dual die (parallel)

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

MAXIMUM RATINGS All Ratings per die: T

C

= 25°C unless otherwise speciﬁ ed.

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BV

(DSS)

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 500μA)

600 Volts

R

DS(on)

Drain-Source On-State Resistance

4

(V

GS

= 10V, I

D

= 70A)

.030 0.035 Ohms

I

DSS

Zero Gate Voltage Drain Current (V

DS

= 650V, V

GS

= 0V)

1.0 50

μA

Zero Gate Voltage Drain Current (V

DS

= 650V, V

GS

= 0V, T

C

= 150°C)

500

I

GSS

Gate-Source Leakage Current (V

GS

= ±20V, V

DS

= 0V)

±200 nA

V

GS(th)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 5.92mA)

2.1 3 3.9 Volts

Microsemi Website - http://www.microsemi.com

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy

6

Turn-off Switching Energy

Turn-on Switching Energy

6

Turn-off Switching Energy

DYNAMIC CHARACTERISTICS APT77N60JC3

050-7146 Rev H 3-2012

1

Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

4

Starting T

j

=

+25°C, L = 36.0mH, R

G

=

25Ω, Peak I

L

= 10A

5

dv

/

dt

numbers reﬂ ect the limitations of the test circuit rather than the

device itself. I

S

≤ -I

D

77A

di

/

dt

≤ 700A/μs V

R

≤ V

DSS

T

J

≤ 150°C

6

Eon includes diode reverse recovery. See ﬁ gures 18, 20.

7 Repetitve avalanche causes additional power losses that can be

calculated as P

AV

=E

AR

*f

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -77A)

Reverse Recovery Time (I

S

= -77A, dl

S

/dt = 100A/μs, V

R

= 350V)

Reverse Recovery Charge (I

S

= -77A, dl

S

/dt = 100A/μs, V

R

= 350V)

Peak Diode Recovery

dv

/

dt

5

UNIT

Amps

Volts

ns

μC

V/ns

MIN TYP MAX

77

231

1 1.2

861

46

6

Symbol

R

θJC

R

θJA

MIN TYP MAX

0.22

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv

/

dt

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Test Conditions

V

GS

= 0V

V

DS

= 25V

f

= 1 MHz

V

GS

= 10V

V

DD

= 300V

I

D

= 77A @ 25°C

RESISTIVE SWITCHING

V

GS

= 10V

V

DD

= 380V

I

D

= 77A @ 125°C

R

G

= 0.9Ω

INDUCTIVE SWITCHING @ 25°C

V

DD

= 400V, V

GS

= 15V

I

D

= 77A, R

G

= 5Ω

INDUCTIVE SWITCHING @ 125°C

V

DD

= 400V, V

GS

= 15V

I

D

= 77A, R

G

= 5Ω

MIN TYP MAX

13600

4400

290

505 640

48

240

18

27

110 165

8 12

1670

2880

2300

3100

UNIT

pF

nC

ns

μJ

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

SINGLE PULSE

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.25

0.20

0.15

0.10

0.05

0

0.5

0.1

0.3

0.7

0.9

0.05

Peak T

J

= P

DM

x Z

θJC

+

T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

4.5V

5V

5.5V

4V

V

GS

=15 &10V

6V & 6.5V

APT77N60JC3

Typical Performance

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

V

GS

=10V

V

GS

=20V

T

J

= +125°C

T

J

= +25°C

T

J

= -55°C

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, NOT USED FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0 5 10 15 20

0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 180

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

NORMALIZED TO

V

GS

= 10V @ 47A

200

180

160

140

120

100

80

60

40

20

0

80

70

60

50

40

30

20

10

0

3

2.5

2.0

1.5

1.0

0.5

0

200

180

160

140

120

100

80

60

40

20

0

1.40

1.30

1.20

1.10

1.00

0.90

0.80

1.15

1.10

1.05

1.00

0.95

0.90

0.85

1.2

1.1

1.0

0.9

0.8

0.7

0.6

I

D

= 47A

V

GS

= 10V

050-7146 Rev H 3-2012

APT77N60JC3

APT77N60JC3

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