APT77N60JC3

APT77N60JC3Typical Performance
C
rss
C
iss
C
oss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
0 10 20 30 40 50
0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5
16
12
8
4
0
T
J
=+150°C
T
J
=+25°C
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100μH
E
on
E
off
t
r
t
f
SWITCHING ENERGY (mJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (mJ) t
r
and t
f
(ns)
10 30 50 70 90 110 130 150 10 30 50 70 90 110 130 150
10 30 50 70 90 110 130 150 0 5 10 15 20 25 30 35 40 45 50
V
DD
= 400V
I
D
= 77A
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
I
D
= 77A
t
d(on)
t
d(off)
E
on
E
off
600
500
400
300
200
100
0
8000
7000
6000
5000
4000
3000
2000
1000
0
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100μH
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
60,000
10,000
1,000
100
10
200
100
10
1
250
200
150
100
50
0
16000
14000
12000
10000
8000
6000
4000
2000
0
0.1
1
10
100
1000
1 10 100 800
1ms
100ms
DC line
100μs
10ms
10μs
050-7146 Rev H 3-2012
10%
t
d(on)
10%
t
r
90%
5%
T
Collector Current
Collector Voltage
Gate Voltage
T
J
= 125 C
Switching Energy
5 %
T
T
J
= 125 C
Collector Voltage
Collector Current
Gate Voltage
90%
90%
t
f
t
d(off)
10%
Switching Energy
0
APT77N60JC3
Figure 18, Turn-on Switching Waveforms and De nitions
Figure 19, Turn-off Switching Waveforms and De nitions
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
I
C
D.U.T.
APT30DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
050-7146 Rev H 3-2012

APT77N60JC3

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - CoolMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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