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MT16JSF51264HZ-1G1D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 9: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 10: Operating Conditions
Sym-
bol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
I
VTT
Termination reference current from V
TT
–600
–
600 mA
V
TT
Termination reference voltage (DC) –
command/address bus
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V 1
I
I
Input leakage current;
Any input 0V ≤ V
IN
≤ V
DD
;
V
REF
input 0V ≤ V
IN
≤ 0.95V
(All other pins not under
test = 0V)
Address in-
puts, RAS#,
CAS#, WE#,
BA
–32 0 32 µA
S#, CKE, ODT,
CK, CK#
–16 0 16
DM –4 0 4
I
OZ
Output leakage current;
0V ≤ V
OUT
≤ V
DD
;
DQ and ODT are
disabled; ODT is HIGH
DQ, DQS,
DQS#
–10 0 10 µA
I
VREF
V
REF
supply leakage current;
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–16 0 16 µA
T
A
Module ambient
operating temperature
Commercial 0
–
70 °C 2, 3
Industrial –40
–
85 °C
T
C
DDR3 SDRAM component
case operating tempera-
ture
Commercial 0
–
95 °C 2, 3, 4
Industrial –40
–
95 °C
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s Web site.
4.
The refresh rate is required to double when 85°C < T
C
≤ 95°C.
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
Electrical Specifications
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. C 2/11 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
DRAM Operating Conditions
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. C 2/11 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
1056 976 896 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
1216 1136 1056 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
720 640 560 mA
Precharge quiet standby current I
DD2Q
2
1072 960 848 mA
Precharge standby current I
DD2N
2
1120 1040 880 mA
Precharge standby ODT current I
DD2NT
2
856 776 696 mA
Active power-down current I
DD3P
2
720 640 560 mA
Active standby current I
DD3N
2
1072 992 912 mA
Burst read operating current I
DD4R
1
2096 1696 1376 mA
Burst write operating current I
DD4W
1
2096 1856 1616 mA
Refresh current I
DD5B
1
4160 3840 3520 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
96 96 96 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
144 144 144 mA
All banks interleaved read current I
DD7
1
4896 4016 3216 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 13: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
856 776 696 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
936 896 856 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
560 480 400 mA
Precharge quiet standby current I
DD2Q
2
640 560 480 mA
Precharge standby current I
DD2N
2
672 592 512 mA
Precharge standby ODT current I
DD2NT
2
496 456 416 mA
Active power-down current I
DD3P
2
640 560 480 mA
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. C 2/11 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT16JSF51264HZ-1G1D1

Mfr. #:
Buy MT16JSF51264HZ-1G1D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 204SODIMM
Lifecycle:
New from this manufacturer.
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