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MT16JSF51264HZ-1G1D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Table 13: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D) (Continued)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Active standby current I
DD3N
2
720 640 560 mA
Burst read operating current I
DD4R
1
1536 1376 1216 mA
Burst write operating current I
DD4W
1
1576 1416 1256 mA
Refresh current I
DD5B
1
1816 1696 1616 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
240 240 240 mA
All banks interleaved read current I
DD7
1
3576 3176 2776 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision H)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
736 696 656 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
896 856 816 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
640 560 480 mA
Precharge quiet standby current I
DD2Q
2
720 640 560 mA
Precharge standby current I
DD2N
2
752 672 592 mA
Precharge standby ODT current I
DD2NT
2
536 496 456 mA
Active power-down current I
DD3P
2
800 720 640 mA
Active standby current I
DD3N
2
880 800 720 mA
Burst read operating current I
DD4R
1
1376 1256 1136 mA
Burst write operating current I
DD4W
1
1376 1256 1136 mA
Refresh current I
DD5B
1
1656 1616 1576 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
240 240 240 mA
All banks interleaved read current I
DD7
1
2176 2056 1936 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. C 2/11 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 15: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
656 616 576 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
736 696 656 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
592 512 432 mA
Precharge quiet standby current I
DD2Q
2
640 560 480 mA
Precharge standby current I
DD2N
2
688 608 528 mA
Precharge standby ODT current I
DD2NT
2
456 416 376 mA
Active power-down current I
DD3P
2
800 720 640 mA
Active standby current I
DD3N
2
880 800 720 mA
Burst read operating current I
DD4R
1
1344 1224 1136 mA
Burst write operating current I
DD4W
1
1256 1136 1016 mA
Refresh current I
DD5B
1
1656 1616 1576 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
216 216 216 mA
All banks interleaved read current I
DD7
1
2016 1896 1776 mA
Reset current I
DD8
2
208 208 208 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. C 2/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM.
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 16: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
–
2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
1.45 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–
0.55 V
Output low voltage: I
OUT
= 2.1mA V
OL
–
0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range
–
–40 125 °C
Temperature sensor accuracy (class B)
–
–1.0 1.0 °C
Table 17: Temperature Sensor and EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7
–
µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R
–
1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0
–
µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7
–
µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250
–
ns
Start condition setup time
t
SU:STA 4.7
–
µs
Stop condition setup time
t
SU:STO 4.0
–
µs
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. C 2/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT16JSF51264HZ-1G1D1

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Buy MT16JSF51264HZ-1G1D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 204SODIMM
Lifecycle:
New from this manufacturer.
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