Vishay Siliconix
DG411HS, DG412HS, DG413HS
www.vishay.com
4
Document Number: 72053
S13-1283-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Dynamic Characteristics (Cont’d)
Off Isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF
f = 1 MHz
Room - 91
dB
Channel-to-Channel Crosstalk
e
X
TAL K
Room - 88
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room 12
pFDrain Off Capacitance
e
C
D(off)
Room 12
Channel On Capacitance
e
C
D(on)
Room 30
Power Supplies
Positive Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
0.0001 1
5
1
5
µA
Negative Supply Current I-
Room
Full
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current I
L
Room
Full
0.0001 1
5
1
5
Ground Current I
GND
Room
Full
- 0.0001 - 1
- 5
- 1
- 5
SPECIFICATIONS
a
(for Unipolar Supplies)
Parameter Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 12 12 V
Drain-Source On-Resistance R
DS(on)
V+ = 10.8 V, I
S
= - 10 mA
V
D
= 3 V, 8 V
Room
Full
49 80
100
80
100
Dynamic Characteristics
Tur n -On Ti m e t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 8 V, see figure 2
Room
Hot
95 140
180
140
160
nsTurn-Off Time t
OFF
Room
Hot
36 70
79
70
74
Break-Before-Make
Time Delay
t
D
DG413HS only, V
S
= 8 V
R
L
= 300 , C
L
= 35 pF
Room 60
Charge Injection Q V
g
= 6 V, R
g
= 0 , C
L
= 1 nF Room 60 pC
Power Supplies
Positive Supply Current I+
V+ = 13.2 V, V
IN
= 0 or 5 V
Room
Hot
0.0001 1
5
1
5
µA
Negative Supply Current I-
Room
Hot
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current I
L
Room
Hot
0.0001 1
5
1
5
Ground Current I
GND
Room
Hot
- 0.0001 - 1
- 5
- 1
- 5
Vishay Siliconix
DG411HS, DG412HS, DG413HS
Document Number: 72053
S13-1283-Rev. D, 27-May-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. V
D
and Dual Supply Voltage
Leakage Current vs. Analog Voltage
On-Resistance vs. V
D
and Temperature
V
D
- Drain Voltage (V)
5
15
25
35
45
55
65
- 20 - 15 - 10 - 5 0 5 10 15 20
T
A
= 25 °C
± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
r
DS(on)
- Drain-Source On-Resistance (Ω)
- 100
- 75
- 50
- 25
0
25
50
- 15 - 10 - 5 0 5 10 15
V
D
or V
S
- Drain or Source Voltage (V)
V+ = + 5 V
V- = - 15 V
V
L
= 5 V
I
D(off)
I
S(off)
I
D(on)
I
S
, I
D
(pA)
5
15
25
35
45
55
65
75
024681012
V
D
- Drain Voltage (V)
r
DS(on)
- Drain-Source On-Resistance (Ω)
V+ = 12 V
V- = 0 V
V
L
= 5 V
125 °C
- 55 °C
25 °C
85
°C
On-Resistance vs. V
D
and Unipolar Supply Voltage
On-Resistance vs. V
D
and Temperature
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
0
50
100
150
200
250
300
02468101214161820
T
A
= 25 °C
V
L
= 5 V
V
D
- Drain Voltage (V)
V+ = 3.0 V
V
L
= 3 V
V+ = 5.0 V
V+ = 8.0 V
V+ = 12.0 V
V+ = 15.0 V
V+ = 20.0 V
r
DS(on)
- Drain-Source On-Resistance (Ω)
5
10
15
20
25
30
35
40
45
- 15 - 10 - 5 0 5 10 15
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
85 °C
25 °C
- 55 °C
V
D
- Drain Voltage (V)
r
DS(on)
- Drain-Source On-Resistance (Ω)
Vishay Siliconix
DG411HS, DG412HS, DG413HS
www.vishay.com
6
Document Number: 72053
S13-1283-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Charge Injection vs. Analog Voltage
Switching Time vs. Temperature
- 100
- 80
- 60
- 40
- 20
0
20
40
60
80
100
- 15 - 10 - 5 0 5 10 15
V - Drain Voltage (V)
V = ± 15 V
V = ± 12 V
Q - Charge Injection (pC)
20
40
60
80
100
120
140
- 55 - 35 - 15 5 25 45 65 85 105 125
T
ON/
T
OFF
(ns)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
t
ON
t
OFF
Temperature (°C)
Charge Injection vs. Analog Voltage
Switching Time vs. Temperature
- 100
- 80
- 60
- 40
- 20
0
20
40
60
80
100
- 15 - 10 - 5 0 5 10 15
V
S
- Source Voltage (V)
V = ± 15 V
V = ± 12 V
Q - Charge Injection (pC)
20
40
60
80
100
120
140
- 55 - 35 - 15 5 25 45 65 85 105 125
T
ON/
T
OFF
(ns)
V+ = 12 V
V- = 0 V
V
L
= 5 V
t
ON
t
OFF
Temperature (°C)
Supply Current vs. Input Switching Frequency
f - Frequency (Hz)
I
SUPPLY
100 mA
10 mA
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
100 1 k 10 k 100 k 1 M 10 M
I+, I-
I
L
V+ = 15 V
V- = - 15 V
V
L
= 5 V
= 1 SW
= 4 SW
10

DG411HSDY-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs HIGH SPEED DG411 IN SOIC-16
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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