Vishay Siliconix
DG411HS, DG412HS, DG413HS
www.vishay.com
8
Document Number: 72053
S13-1283-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72053
.
Figure 4. Charge Injection
C
L
1 nF
D
R
g
V
O
V+
S
V-
3 V
IN
V
L
V
g
-15 V
GND
+ 15 V+ 5 V
OFFONOFF
OFFONOFF
V
O
ΔV
O
IN
X
IN
X
Q = ΔV
O
x C
L
Figure 5. Crosstalk
0 V, 2.4 V
S
1
X
TALK
Isolation = 20 log
V
O
V
S
D
2
C = RF bypass
R
L
D
1
S
2
V
S
0 V, 2.4 V
IN
1
50 Ω
V
O
IN
2
R
g
= 50 Ω
V
L
V+
- 15 V
GND V-
NC
C
+ 15 V
C
+ 5 V
C
Figure 6. Off-Isolation
R
L
50 Ω
D
0 V, 2.4 V
V+
R
g
= 50 Ω
-15 V
GND V-
C
V
S
Off Isolation = 20 log
V
O
V
S
IN
V
L
V
O
+ 5 V
C
+ 15 V
S
C
C = RF Bypass
Figure 7. Source/Drain Capacitances
D
IN
S
V
L V+
-15 V
GND V-
C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
+ 5 V
C
+ 15 V
C
