March 2015
DocID025617 Rev 2
1/14
This is information on a product in full production.
www.st.com
STL8P4LLF6
P-channel 40 V, 0.0175 Ω typ.,8 A, STripFET™ F6
Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
For the P-channel Power MOSFET, current
polarity of voltages and current have to be
reversed.
Table 1: Device summary
Order code Marking Package Packaging
STL8P4LLF6
8P4F6
PowerFLAT™ 3.3 x 3.3 Tape and reel
1
2
3
4
PowerFLA
T™ 3.3x3.3
STL8P4LLF6
2/14
DocID025617 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 PowerFLAT™ 3.3x3.3 package information .................................... 10
5 Revision history ............................................................................ 13
STL8P4LLF6
Electrical ratings
DocID025617 Rev 2
3/14
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 40 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
Drain current (continuous) at T
pcb
= 25 °C 8 A
I
D
(1)
Drain current (continuous) at T
pcb
= 100 °C 5 A
I
DM
(1)(2)
Drain current (pulsed) 32 A
P
TOT
Total dissipation at T
pcb
= 25 °C 2.9 W
T
stg
Storage temperature -55 to 150 °C
T
j
Maximum junction temperature 150 °C
Notes:
(1)
this value is related to R
thj-pcb
(2)
Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 2.50 °C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb max. 42.8 °C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2oz Cu, t 10 s
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.

STL8P4LLF6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET P-CH 40V 8A PWRFLAT8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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