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STL8P4LLF6

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics
STL8P4LLF6
4/14
DocID025617 Rev 2
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 250 µA 40
V
I
DSS
Zero gate voltage Drain
current
V
GS
= 0 V, V
DS
= 40 V
1 µA
V
GS
= 0 V, V
DS
= 40 V,
T
C
= 125 °C
10 µA
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ± 20 V
±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 1
2.5 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 4 A
0.0175 0.0205
Ω
V
GS
= 4.5 V, I
D
= 4 A
0.021 0.029
Table 5: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
- 2850 - pF
C
oss
Output capacitance - 270 - pF
C
rss
Reverse transfer
capacitance
- 180 - pF
Q
g
Total gate charge V
DD
= 20 V, I
D
= 8 A,
V
GS
= 4.5 V (see Figure
14: "Gate charge test
circuit")
- 22 - nC
Q
gs
Gate-source charge - 9.4 - nC
Q
gd
Gate-drain charge - 7.3 - nC
R
G
Gate input resistance
I
D
= 0 A, gate DC
bias = 0 V, f = 1 MHz,
magnitude of alternative
signal = 20 mV
- 1.4 - Ω
Table 6: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 20 V, I
D
= 4 A
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13:
"Switching times test
circuit for resistive load")
- 43 - ns
t
r
Rise time - 47 - ns
t
d(off)
Turn-off-delay time - 148 - ns
t
f
Fall time - 19 - ns
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
STL8P4LLF6
Electrical characteristics
DocID025617 Rev 2
5/14
Table 7: Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD
(1)
Forward on voltage V
GS
= 0 V, I
SD
= 8 A -
1.1 V
t
rr
Reverse recovery time I
SD
= 8 A,
di/dt = 100 A/µs,
V
DD
= 32 V, T
j
= 150 °C
(see Figure 15: "Test
circuit for inductive load
switching and diode
recovery times")
- 26
ns
Q
rr
Reverse recovery
charge
- 21
nC
I
RRM
Reverse recovery
current
- 1.7
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
Electrical characteristics
STL8P4LLF6
6/14
DocID025617 Rev 2
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage
vs temperature
Figure 7: Normalized V(BR)DSS vs
temperature
P1-P3P4-P6P7-P9P10-P12P13-P14

STL8P4LLF6

Mfr. #:
Buy STL8P4LLF6
Manufacturer:
STMicroelectronics
Description:
MOSFET P-CH 40V 8A PWRFLAT8
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