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SIC638CD-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
SiC638
www.vishay.com
Vishay Siliconix
S18-0299-Rev. A, 19-Mar-18
1
Document Number: 76582
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
50 A VRPower
®
Integrated Power Stage
DESCRIPTION
The SiC638 are integrated power stage solutions optimized
for synchronous buck applications to offer high current, high
efficiency, and high power density performance. Packaged
in Vishay’s proprietary
5 mm x 5 mm
MLP package, SiC638
enables voltage regulator designs to deliver up to 50 A
continuous current per phase.
The internal power MOSFETs utilizes Vishay’s
state-of-the-art Gen IV TrenchFET technology that delivers
industry benchmark performance to significantly reduce
switching and conduction losses.
The SiC638 incorporate an advanced MOSFET gate driver
IC that features high current driving capability, adaptive
dead-time control, an integrated bootstrap Schottky diode,
a thermal warning (THWn) that alerts the system of
excessive junction temperature, and zero current detection
to improve light load efficiency. The drivers are also
compatible with a wide range of PWM controllers and
supports tri-state PWM, 3.3 V / 5 V PWM logic.
FEATURES
• Thermally enhanced PowerPAK
®
MLP55-31L
package
• Vishay’s Gen IV MOSFET technology and a low
side MOSFET with integrated Schottky diode
• Delivers up to 50 A continuous current
• High efficiency performance
• High frequency operation up to 1.5 MHz
• Power MOSFETs optimized for 19 V input stage
• 3.3 V / 5 V PWM logic with tri-state and hold-off
• Zero current detect control for light load efficiency
improvement
• Low PWM propagation delay (< 20 ns)
• Faster disable
• Thermal monitor flag
• Under voltage lockout for V
CIN
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Multi-phase VRDs for computing, graphics card and
memory
• Intel IMVP-8 VRPower delivery
-V
CORE
, V
GRAPHICS
, V
SYSTEM AGENT
Skylake, Kabylake
platforms
-V
CCGI
for Apollo Lake platforms
• Up to 24 V rail input DC/DC VR modules
TYPICAL APPLICATION DIAGRAM
Fig. 1 - SiC638 and SiC638A Typical Application Diagram
PWM
controller
Gate
driver
5V Input
Output
V
CIN
ZCD_EN#
DSBL#
PWM
THWn
V
DRV
V
NC
IN
BOOT
SW
P
GND
GL
C
GND
PHASE
SiC638
www.vishay.com
Vishay Siliconix
S18-0299-Rev. A, 19-Mar-18
2
Document Number: 76582
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PINOUT CONFIGURATION
Fig. 2 - SiC638 and SiC638A Pin Configuration
PIN CONFIGURATION
PIN NUMBER NAME FUNCTION
1 PWM PWM input logic
2 ZCD_EN#
The ZCD_EN# pin enables or disables diode emulation. When ZCD_EN# is LOW, diode emulation is
allowed. When ZCD_EN# is HIGH, continuous conduction mode is forced
3V
CIN
Supply voltage for internal logic circuitry
4, 32 C
GND
Signal ground
5 BOOT High side driver bootstrap voltage
6 N.C. Not connected internally, can be left floating or connected to ground
7 PHASE Return path of high side gate driver
8 to 11, 34 V
IN
Power stage input voltage. Drain of high side MOSFET
12 to 15, 28, 35 P
GND
Power ground
16 to 26 SW Phase node of the power stage
27, 33 GL Low side MOSFET gate signal
29 V
DRV
Supply voltage for internal gate driver
30 THWn Thermal warning open drain output
31 DSBL# Disable pin. Active low
ORDERING INFORMATION
PART NUMBER PACKAGE MARKING CODE OPTION
SiC638CD-T1-GE3 PowerPAK MLP55-31L SiC638 5 V PWM optimized
SiC638ACD-T1-GE3 PowerPAK MLP55-31L SiC638A 3.3 V PWM optimized
SiC638DB Reference board
P
GND
C
GND
BOOT
PHASE
V
IN
P
GND
P
GND
P
GND
P
GND
V
IN
V
IN
V
IN
N.C.
GL
V
DRV
THWn
DSBL#
PWM
ZCD_EN#
V
CIN
PGND
VIN
CGND
GL
Top view Bottom view
P
GND
C
GND
BOOT
PHASE
V
IN
P
GND
P
GND
P
GND
P
GND
V
IN
V
IN
V
IN
N.C.
GL
V
DRV
THWn
DSBL#
PWM
ZCD_EN#
V
CIN
35
P
GND
34
V
IN
32
C
GND
GL
2
1
4
3
6
5
8
7
2425262728293031
1514131211109
2
1
4
3
6
5
8
7
15 14 13 12 11 10 9
24 25 26 27 28 29 30 31
V
SWH
23
SW
SW
SW
SW
SW
SW
33
GL
V
SWH
22
V
SWH
21
V
SWH
20
V
SWH
19
V
SWH
18
V
SWH
17
V
SWH
16
23 V
SWH
22 V
SWH
21 V
SWH
20 V
SWH
19 V
SWH
16 V
SWH
18 V
SWH
17 V
SWH
SiC638
www.vishay.com
Vishay Siliconix
S18-0299-Rev. A, 19-Mar-18
3
Document Number: 76582
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PART MARKING INFORMATION
Notes
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
(1)
The specification values indicated “AC” is V
SWH
to P
GND
-8 V (< 20 ns, 10 μJ), min. and 35 V (< 50 ns), max.
(2)
The specification value indicates “AC voltage” is V
BOOT
to P
GND
, 40 V (< 50 ns) max.
(3)
The specification value indicates “AC voltage” is V
BOOT
to V
PHASE
, 8 V (< 20 ns) max.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT
Input voltage V
IN
-0.3 to +30
V
Control logic supply voltage V
CIN
-0.3 to +7
Drive supply voltage V
DRV
-0.3 to +7
Switch node (DC voltage)
V
SWH
-0.3 to +30
Switch node (AC voltage)
(1)
-7 to +35
BOOT voltage (DC voltage)
V
BOOT
35
BOOT voltage (AC voltage)
(2)
40
BOOT to PHASE (DC voltage)
V
BOOT-PHASE
-0.3 to +7
BOOT to PHASE (AC voltage)
(3)
-0.3 to +8
All logic inputs and outputs
(PWM, DSBL#, and THWn)
-0.3 to V
CIN
+ 0.3
Max. operating junction temperature T
J
150
°CAmbient temperature T
A
-40 to +125
Storage temperature T
stg
-65 to +150
Electrostatic discharge protection
Human body model, JESD22-A114 3000
V
Charged device model, JESD22-C101 1000
RECOMMENDED OPERATING RANGE
ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT
Input voltage (V
IN
)2.7-24
V
Drive supply voltage (V
DRV
) 4.555.5
Control logic supply voltage (V
CIN
) 4.555.5
BOOT to PHASE (V
BOOT-PHASE
, DC voltage) 4 4.5 5.5
Thermal resistance from junction to ambient - 10.6 -
°C/W
Thermal resistance from junction to case - 1.6 -
= Pin 1 Indicator
P/N = Part Number Code
= Siliconix Logo
= ESD Symbol
F = Assembly Factory Code
Y = Year Code
WW = Week Code
LL = Lot Code
F Y W W
P/N
LL
P1-P3P4-P6P7-P9P10-P12P13-P14

SIC638CD-T1-GE3

Mfr. #:
Buy SIC638CD-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
Power Management Specialized - PMIC 50A 1.5MHz 19V PowerPAK MLP55-31L
Lifecycle:
New from this manufacturer.
Delivery:
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