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2N7002K-T1-GE3

P1-P3P4-P6P7-P9
Vishay Siliconix
2N7002K
Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 2 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET
®
Power MOSFET
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(mA)
60
2 at V
GS
= 10 V
300
T
O
-236
SOT -23
1
2
3
Top View
2N7002K (7K)*
* Marking Code
G
S
D
Ordering Information: 2N7002K-T1
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
b
T
A
= 25 °C
I
D
300
mA
T
A
= 100 °C
190
Pulsed Drain Current
a
I
DM
800
Power Dissipation
b
T
A
= 25 °C
P
D
0.35
W
T
A
= 100 °C
0.14
Maximum Junction-to-Ambient
b
R
thJA
350 °C/W
Operating Junction and Storage Temperature Range
T
J,
T
stg
- 55 to 150 °C
www.vishay.com
2
Document Number: 71333
S09-0857-Rev. E, 18-May-09
Vishay Siliconix
2N7002K
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ.
a
Max.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 10 µA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
12.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 10
µA
V
DS
= 0 V, V
GS
= ± 15 V
1
V
DS
= 0 V, V
GS
= ± 10 V
± 150 nA
V
DS
= 0 V, V
GS
= ± 10 V, T
J
= 85 °C
± 1000
V
DS
= 0 V, V
GS
= ± 5 V
± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V , T
J
= 125 °C
500
On-State Drain Current
a
I
D(on)
V
GS
= 10 V, V
DS
= 7.5 V
800
mA
V
GS
= 4.5 V, V
DS
= 10 V
500
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 500 mA
2
Ω
V
GS
= 4.5 V, I
D
= 200 mA
4
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA
100 mS
Diode Forward Voltage
V
SD
I
S
= 200 mA, V
GS
= 0 V
1.3 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V
I
D
≅ 250 mA
0.4 0.6 nC
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
30
pFOutput Capacitance
C
oss
6
Reverse Transfer Capacitance
C
rss
2.5
Switching
a, b, c
Tur n -O n T i m e
t
d(on)
V
DD
= 30 V, R
L
= 150 Ω
I
D
≅ 200 mA, V
GEN
= 10 V, R
G
= 10 Ω
25
ns
Turn-Off Time
t
d(off)
35
Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
3
Vishay Siliconix
2N7002K
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1
.
0
012 345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V
3 V
5 V
4 V
6 V
7 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4
.
0
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
V
DS
= 10 V
I
D
= 250 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
0
8
16
24
32
40
0 5 10 15 20 25
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
0.0
0.4
0.8
1.2
1.6
2
.
0
- 50 - 25 0 2 5 5 0 7 5 100 125 150
T
J
- Junction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V
at 200 mA
(Normalized)
- On-ResistanceR
DS(on)
P1-P3P4-P6P7-P9

2N7002K-T1-GE3

Mfr. #:
Buy 2N7002K-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
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