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Document Number: 71333
S09-0857-Rev. E, 18-May-09
Vishay Siliconix
2N7002K
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage Variance Over Temperature
1.2 1.5
1
100
1000
0.0 0.3 0.6 0.9
T
J
= 125 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
T
J
= - 55 °C
V
GS
= 0 V
T
J
= 25 °C
Variance (V)V
GS(th)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
.
- 50 - 25 0 2 5 5 0 7 5 100 125 150
I
D
= 250 µA
T
J
- Junction Temperature (°C)
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
1
2
3
4
02468 10
V
GS
- Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
- On-Resistance (Ω)R
DS(on)
0.01
0
1
2.5
100 600 0.1
Power
W
Time (s)
1.5
2
0.5
1
10
T
A
= 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 10
-3
10
-2
1 1 0 600 10
-1 -4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 350 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
