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SSM3K35AFS,LF

P1-P3P4-P6P7-P9
SSM3K35AFS
1
MOSFETs Silicon N-Channel MOS
SSM3K35AFS
SSM3K35AFS
SSM3K35AFS
SSM3K35AFS
Start of commercial production
2016-10
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
• Analog Switches
2.
2.
2.
2. Features
Features
Features
Features
(1) 1.2 V drive
(2) Low drain-source on-resistance
: R
DS(ON)
= 9.0 Ω (max) (@V
GS
= 1.2 V, I
D
= 10 mA)
R
DS(ON)
= 3.1 Ω (max) (@V
GS
= 1.5 V, I
D
= 20 mA)
R
DS(ON)
= 2.4 Ω (max) (@V
GS
= 1.8 V, I
D
= 150 mA)
R
DS(ON)
= 1.6 Ω (max) (@V
GS
= 2.5 V, I
D
= 150 mA)
R
DS(ON)
= 1.1 Ω (max) (@V
GS
= 4.5 V, I
D
= 150 mA)
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
SSM
1: Gate
2: Source
3: Drain
2017-02-17
Rev.3.0
©2016 Toshiba Corporation
SSM3K35AFS
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(Note 1)
(Note 1)
(Note 2)
(Note 3)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
20
±10
250
600
150
500
150
-55 to 150
Unit
V
mA
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.36 mm
2
× 3)
Note 3: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm
2
)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2017-02-17
Rev.3.0
©2016 Toshiba Corporation
SSM3K35AFS
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
Reverse drain current (pulsed)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
|Y
fs
|
I
DRP
Test Condition
V
GS
= ±10 V, V
DS
= 0 V
V
DS
= 20 V, V
GS
= 0 V
I
D
= 1 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 100 µA
I
D
= 150 mA, V
GS
= 4.5 V
I
D
= 150 mA, V
GS
= 2.5 V
I
D
= 150 mA, V
GS
= 1.8 V
I
D
= 20 mA, V
GS
= 1.5 V
I
D
= 10 mA, V
GS
= 1.2 V
I
D
= 150 mA, V
GS
= 4.5 V,
T
j
= 125
V
DS
= 10 V, I
D
= 150 mA
Min
20
0.35
Typ.
0.75
1.1
1.4
1.7
2.4
1.25
0.5
Max
±1
1
1.0
1.1
1.6
2.4
3.1
9.0
2.5
600
Unit
µA
V
V
Ω
S
mA
Note 1: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (100 µA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on delay time)
Switching time (rise time)
Switching time (turn-off delay time)
Switching time (fall time)
Symbol
C
iss
C
rss
C
oss
t
d(on)
t
r
t
d(off)
t
f
Test Condition
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 10 V, I
D
= 75 mA,
V
GS
= 0 to 4.5 V, R
G
= 10 Ω
Min
Typ.
18
5
6
2
2
6.5
5.5
Max
36
10
12
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
2017-02-17
Rev.3.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P9

SSM3K35AFS,LF

Mfr. #:
Buy SSM3K35AFS,LF
Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=.25A VDSS=20V
Lifecycle:
New from this manufacturer.
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