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SSM3K35AFS,LF

P1-P3P4-P6P7-P9
SSM3K35AFS
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= 10 V, I
D
= 200 mA,
V
GS
= 4.5 V
Min
Typ.
0.34
0.09
0.16
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Diode forward voltage (Note 1)
Symbol
V
DSF
Test Condition
I
D
= -150 mA, V
GS
= 0 V
Min
Typ.
-0.8
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2017-02-17
Rev.3.0
©2016 Toshiba Corporation
SSM3K35AFS
5
7.
7.
7.
7. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 7.2
7.2
7.2
7.2 I
I
I
I
D
D
D
D
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 7.3
7.3
7.3
7.3 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 7.4
7.4
7.4
7.4 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 7.5
7.5
7.5
7.5 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- I
- I
- I
- I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 7.6
7.6
7.6
7.6 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- T
- T
- T
- T
a
a
a
a
2017-02-17
Rev.3.0
©2016 Toshiba Corporation
SSM3K35AFS
6
Fig.
Fig.
Fig.
Fig. 7.7
7.7
7.7
7.7 V
V
V
V
th
th
th
th
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 7.8
7.8
7.8
7.8 |Y
|Y
|Y
|Y
fs
fs
fs
fs
| - I
| - I
| - I
| - I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 7.9
7.9
7.9
7.9 I
I
I
I
DR
DR
DR
DR
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 7.10
7.10
7.10
7.10 C - V
C - V
C - V
C - V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 7.11
7.11
7.11
7.11 t - I
t - I
t - I
t - I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 7.12
7.12
7.12
7.12 Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics
2017-02-17
Rev.3.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P9

SSM3K35AFS,LF

Mfr. #:
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Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=.25A VDSS=20V
Lifecycle:
New from this manufacturer.
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