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BFT25A,215

P1-P3P4-P6P7-P9P10-P12P13-P15
1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to2GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features and benefits
Low current consumption (100 A to 1 mA)
Low noise figure
Gold metallization ensures excellent reliability.
1.3 Quick reference data
[1] T
s
is the temperature at the soldering point of the collector tab.
BFT25A
NPN 5 GHz wideband transistor
Rev. 5 — 12 September 2011 Product data sheet
SOT23
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base
voltage
open emitter - - 8 V
V
CEO
collector-emitter
voltage
open base - - 5 V
I
C
DC collector
current
--6.5mA
P
tot
total power
dissipation
up to T
s
= 165 C
[1]
--32mW
h
FE
DC current gain I
C
= 0.5 mA; V
CE
= 1 V 50 80 200
f
T
transition
frequency
I
C
= 1 mA; V
CE
= 1 V;
T
amb
=25C;
f = 500 MHz
3.5 5 - GHz
G
UM
maximum
unilateral power
gain
I
C
= 0.5 mA; V
CE
= 1 V;
T
amb
= 25 C;
f=1 GHz
-15-dB
F noise figure =
opt
; I
C
= 0.5 mA;
V
CE
= 1 V;
T
amb
=25 C; f = 1 GHz
-1.8-dB
=
opt
; I
C
= 1 mA;
V
CE
= 1 V;
T
amb
=25 C; f = 1 GHz
-2-dB
BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 12 September 2011 2 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
5. Limiting values
[1] T
s
is the temperature at the soldering point of the collector tab.
Table 2. Discrete pinning
Pin Description Simplified outline Symbol
Code: V10
1base
2emitter
3 collector
12
3
sym021
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
BFT25A - plastic surface mounted package; 3 leads SOT23
Table 4. Marking
Type number Marking code
[1]
BFT25A 34*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 8 V
V
CEO
collector-emitter voltage open base - 5 V
V
EBO
emitter-base voltage open collector - 2 V
I
C
DC collector current - 6.5 mA
P
tot
total power dissipation up to T
s
=165C
[1]
-32mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 175 C
BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 12 September 2011 3 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
6. Thermal characteristics
[1] T
s
is the temperature at the soldering point of the collector tab.
7. Characteristics
[1] G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-s)
from junction to soldering point
[1]
260 K/W
Table 7. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector cut-off
current
I
E
= 0 A; V
CB
= 5 V - - 50 nA
h
FE
DC current gain I
C
= 0.5 mA; V
CE
= 1 V 50 80 200
f
T
transition
frequency
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25 C;
f = 500 MHz
3.5 5 - GHz
C
re
feedback
capacitance
I
C
=i
c
=0A; V
CB
=1 V;
f= 1 MHz
- 0.3 0.45 pF
G
UM
maximum
unilateral power
gain
I
C
= 0.5 mA; V
CE
= 1 V;
T
amb
= 25 C; f = 1 GHz
[1]
-15-dB
F noise figure =
opt
; I
C
= 0.5 mA;
V
CE
= 1 V;
T
amb
=25C; f = 1 GHz
-1.8-dB
=
opt
; I
C
= 1 mA;
V
CE
= 1 V;
T
amb
=25C; f = 1 GHz
-2-dB
G
UM
10 log
S
21
2
1S
11
2
–1S
22
2
–
------------------------------------------------------
dB=
P1-P3P4-P6P7-P9P10-P12P13-P15

BFT25A,215

Mfr. #:
Buy BFT25A,215
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 5V 5GHZ
Lifecycle:
New from this manufacturer.
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