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BFT25A,215
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BFT25A
All informatio
n provided in thi
s document is
subject to le
gal disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 5 — 12 Septem
ber 201
1
4 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
Figure 5
,
6
,
7
and
8
, G
UM
=
maximum unilateral power gain
; MSG = maximum stable gain.
V
CE
=1
V
.
Fig 1.
Power derating c
urve.
Fig 2.
DC current gain as
a function of coll
ector
current.
0
50
100
200
40
30
10
0
20
mbg247
150
P
tot
(mW)
T
s
(
°
C)
mcd138
0
100
20
40
60
80
h
FE
I
C
(mA)
10
−
2
10
−
3
10
−
1
1
10
I
C
= i
c
= 0 A; f = 1 MHz.
V
CE
=1
V
;
T
amb
=2
5
C; f = 500 MHz.
Fig 3.
Feedback capacit
ance as a function of
collector-base voltage.
Fig 4.
T
ransitio
n frequency as a function
of collector
current.
0
5
0.4
0.3
0.1
0
0.2
mcd103
12
3
4
C
re
(pF)
V
CB
(V)
0
6
4
2
0
12
4
mcd140
3
I
C
(mA)
f
T
(GHz)
BFT25A
All informatio
n provided in thi
s document is
subject to le
gal disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 5 — 12 Septem
ber 201
1
5 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
V
CE
= 1 V
; f = 500 MHz.
V
CE
= 1 V
; f = 1 GHz.
Fig 5.
Gain as a function of collector curre
nt.
Fi
g 6.
Gain as a function of collecto
r current.
0
0.5
1.0
2.0
25
0
10
mcd104
1.5
20
15
5
MSG
G
UM
gain
(dB)
I
C
(mA)
0
0.5
1.0
2.0
0
10
mcd105
1.5
20
15
5
MSG
G
UM
gain
(dB)
I
C
(mA)
V
CE
=1
V
;
I
C
= 0.5 mA.
V
CE
=1
V
;
I
C
= 1 mA.
Fig 7.
Gain as a functio
n of frequency
.
Fig 8.
Gain as a function o
f frequency
.
mcd106
50
40
30
20
10
0
gain
(dB)
f (MHz)
MSG
G
UM
G
max
10
10
2
10
3
10
4
mcd107
50
40
30
20
10
0
gain
(dB)
f (MHz)
MSG
G
UM
G
max
10
10
2
10
3
10
4
BFT25A
All informatio
n provided in thi
s document is
subject to le
gal disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 5 — 12 Septem
ber 201
1
6 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
V
CE
=1
V
.
V
CE
=1
V
.
Fig 9.
Minimum noise figure as a function of
collector current.
Fig 10.
Minimum nois
e figu
re as a function of
frequency
.
4
2
1
0
3
mcd145
10
−
1
11
0
F
(dB)
I
C
(mA)
f =
2 GHz
1 GHz
500 MHz
4
2
1
0
3
mcd146
10
2
10
3
10
4
F
(dB)
f (MHz)
I
C
=
2 mA
1 mA
0.5 mA
See
T
able 8
;
Z
o
= 50
.
Average gain parameter: MSG = 14.5 dB.
Fig 1
1.
Noise circ
le figure.
mcd108
0.2
0.5
1
2
5
0.2
0.5
1
2
5
10
10
0
5
0.5
0.2
2
1
10
+
j
−
j
∞
stability
circle
pot.
unst.
region
F
min
= 1.9 dB
Γ
opt
11 dB
6 dB
4 dB
MSG
14.5 dB
13 dB
2.5 dB
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BFT25A,215
Mfr. #:
Buy BFT25A,215
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 5V 5GHZ
Lifecycle:
New from this manufacturer.
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