NXP Semiconductors
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 21 December 2012 3 / 16
Symbol Parameter Conditions Min Max Unit
V
GS
gate-source voltage -12 12 V
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - -3.7 A
V
GS
= -4.5 V; T
amb
= 25 °C [1] - -2.7 A
I
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -1.7 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -11 A
[2] - 485 mWT
amb
= 25 °C
[1] - 1100 mW
P
tot
total power dissipation
T
sp
= 25 °C - 6250 mW
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - -1.1 A
Schottky diode
V
R
reverse voltage T
amb
= 25 °C - 20 V
I
F
forward current T
sp
≤ 105 °C - 2 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.25 ; T
amb
= 25 °C - 7 A
t
p
= 8 ms; T
j(init)
= 25 °C; square wave - 18 AI
FSM
non-repetitive peak forward
current
t
p
= 8 ms; T
j(init)
= 25 °C; half-sine wave [3] - 25 A
[2] - 480 mWT
amb
= 25 °C
[1] - 1190 mW
P
tot
total power dissipation
T
sp
= 25 °C - 6250 mW
Per device
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Calculated from square-wave measurements.
