NXP Semiconductors
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 21 December 2012 8 / 16
Symbol Parameter Conditions Min Typ Max Unit
C
iss
input capacitance - 550 - pF
C
oss
output capacitance - 63 - pF
C
rss
reverse transfer
capacitance
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 53 - pF
t
d(on)
turn-on delay time - 6 - ns
t
r
rise time - 14 - ns
t
d(off)
turn-off delay time - 120 - ns
t
f
fall time
V
DS
= -10 V; I
D
= -2.4 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 50 - ns
MOSFET transistor source-drain diode
V
SD
source-drain voltage I
S
= -1.1 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
Schottky diode
I
F
= 100 mA; T
j
= 25 °C - 225 275 mV
I
F
= 500 mA; T
j
= 25 °C - 285 335 mV
V
F
forward voltage
I
F
= 1 A; T
j
= 25 °C - 320 365 mV
V
R
= 5 V; T
j
= 25 °C - 65 220 µA
V
R
= 5 V; T
j
= 125 °C - 13 50 mA
V
R
= 10 V; T
j
= 25 °C - 110 400 µA
I
R
reverse current
V
R
= 20 V; T
j
= 25 °C - 230 700 µA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; T
j
= 25 °C - 60 70 pF
V
DS
(V)
0 -4-3-1 -2
017aaa531
-4
-6
-2
-8
-10
I
D
(A)
0
V
GS
= -1.8 V
-10 V
-4.5 V
-2.5 V
-2 V
-1.6 V
-1.5 V
-1.4 V
-1.2 V
-1 V
T
j
= 25 °C
Fig. 8. MOSFET transistor: Output characteristics:
drain current as a function of drain-source
voltage; typical values
017aaa532
-10
-4
-10
-3
I
D
(A)
-10
-5
V
GS
(V)
0 -1.00-0.75-0.25 -0.50
min typ max
T
j
= 25 °C; V
DS
= -5 V
Fig. 9. MOSFET transistor: Subthreshold drain current
as a function of gate-source voltage
