IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH20N120C3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 20A, V
CE
= 10V, Note 1 7.0 11.5 S
C
ie
s
1110 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 120 pF
C
res
27 pF
Q
g(on)
53 nC
Q
ge
I
C
= 20A, V
GE
= 15V, V
CE
= 0.5 • V
CES
9 nC
Q
gc
22 nC
t
d(on)
20 ns
t
ri
29 ns
E
on
1.3 mJ
t
d(off)
90 ns
t
fi
108 ns
E
of
f
0.5 1.0 mJ
t
d(on)
20 ns
t
ri
40 ns
E
on
3.7 mJ
t
d(off)
115 ns
t
fi
105 ns
E
off
0.7 mJ
R
thJC
0.54 °C/W
R
thCS
0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= 20A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
Inductive load, T
J
= 150°C
I
C
= 20A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
(T
J
= 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
V
F
3.00 V
T
J
= 150°C 1.75 V
I
RM
9 A
t
rr
195 ns
R
thJC
0.90 °C/W
I
F
= 30A,V
GE
= 0V, -di
F
/dt = 100A/μs, T
J
= 100°C
V
R
= 600V T
J
= 100°C
I
F
= 30A,V
GE
= 0V, Note 1
Reverse Diode (FRED)
