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IXYH20N120C3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH20N120C3D1
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 20A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH20N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
0.4
0.8
1.2
1.6
2
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f i
- Nanoseconds
40
80
120
160
200
240
280
320
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
f i
- Nanoseconds
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH20N120C3D1
IXYS REF: IXY_20N120C3(4L) 9-06-13-C
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
40
80
120
160
200
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
r i
- Nanoseconds
19
20
21
22
23
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
40
80
120
160
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
17
19
21
23
25
27
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 20A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r i
- Nanosecond
s
15
20
25
30
35
40
45
50
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 21. Maximum Peak Load Current vs. Frequency
0
10
20
30
40
50
60
70
80
0.1 1 10 100 1000
f
max
- KiloHertzs
I
C
- Amperes
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 600V
V
GE
= 15V
R
G
= 10
D = 0.5
Square Wave
Triangular Wave
Fig. 22. Maximum Transient Thermal Impedance (Diode)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6P7-P7

IXYH20N120C3D1

Mfr. #:
Buy IXYH20N120C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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