2000 Dec 04 2
NXP Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012
FEATURES
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
APPLICATIONS
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN DESCRIPTION
1RF in
2V
C
3V
S
4RF out
5, 6 GND
handbook, halfpage
Top view MBL251
BIAS
CIRCUIT
RF in
RF out
GND
V
S
V
C
132
4
56
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A6-
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage RF input AC coupled 3 4.5 V
I
S
DC supply current 7.5 mA
I
C
DC control current V
C
=V
S
0.11 mA
|s
21
|
2
insertion power gain in application circuit, see Fig.2;
f = 1900 MHz
16 dB
NF noise figure I
S
= 7 mA; f = 1900 MHz 1.7 dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled 4.5 V
V
C
voltage on control pin V
S
V
I
S
supply current forced by DC voltage on RF input 15 mA
I
C
control current 0.25 mA
P
tot
total power dissipation T
s
100 C 70 mW
T
stg
storage temperature 65 +150 C
T
j
operating junction temperature 150 C
