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OM7601/BGA2012

P1-P3P4-P6P7-P9P10-P12
2000 Dec 04 4
NXP Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
r
= 6.15),
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
COMPONENT DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603
C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603
C4 multilayer ceramic chip capacitor 
C6 multilayer ceramic chip capacitor 100 nF 0805
L1 SMD inductor 3.9 nH 0603
L2 SMD inductor 3.9 nH 0603
handbook, full pagewidth
GND
OUT
stripline
BIAS
CIRCUIT
C1
C6
L1
V
C
L2
RF in
V
S
V
C
IN
C4
SOT363
C5
C2
RF out
C3
V
S
MLD470
Fig.2 Application circuit.
2000 Dec 04 5
NXP Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012
handbook, halfpage
0 1000
f (MHz)
gain
(dB)
3000
25
0
2000
5
10
15
20
MLD471
s
21
2
G
UM
G
max
Fig.3 Insertion gain (s
21
2
), G
UM
and G
max
as
functions of frequency; typical values.
I
C
=7mA; V
S
=V
C
=3V; P
D
= 30 dBm; Z
o
=50
handbook, halfpage
0
I
S
1
V
C
(V)
gain
(dB)
3
20
0
2
4
8
12
16
I
S
(mA)
10
0
2
4
6
8
MLD472
s
21
2
Fig.4 Insertion gain and supply current as
functions of control voltage; typical values.
f = 1900 MHz; V
S
=3V; P
D
= 30 dBm.
handbook, halfpage
20
10
5
0
15
MLD473
10
−3
10
−2
10
−1
I
C
(mA)
s
21
2
(dB)
f = 1900 MHz; V
S
=3V; P
D
= 30 dBm.
Fig.5 Insertion gain as a function of control
current; typical values.
handbook, halfpage
0
I
S
(mA)
IP3
out
(dBm)
24 8
10
0
−5
5
IP3
in
(dBm)
0
−10
−15
−5
6
MLD474
IP3
out
IP3
in
V
S
=V
C
=3V; P
D
= 30 dBm (both tones); f = 1900 MHz; f=100kHz.
Fig.6 Output and input 3rd order intercept point
as functions of supply current; typical
application; typical values.
2000 Dec 04 6
NXP Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012
handbook, halfpage
2468
I
S
(mA)
NF
(dB)
2
0
1.6
1.2
0.8
0.4
MLD475
Fig.7 Noise figure as a function of
supply current; typical values.
V
S
=V
C
= 3 V; f = 1900 MHz
Scattering parameters
V
S
=V
C
=3V; P
D
= 30 dBm; Z
o
=50; T
amb
=25C
f
(MHz)
s
11
s
21
s
12
s
22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100 0.775 8.390 12.527 171.1 0.005 84.90 0.742 6.684
200 0.761 16.37 12.154 163.1 0.011 79.39 0.731 13.15
400 0.709 31.51 11.213 148.6 0.020 72.23 0.689 24.85
600 0.646 44.97 10.139 136.4 0.028 66.03 0.631 34.90
800 0.581 56.47 9.061 126.1 0.034 61.82 0.573 43.40
1000 0.519 66.59 8.131 117.3 0.039 58.86 0.519 50.54
1200 0.461 75.41 7.254 109.5 0.043 58.07 0.469 57.19
1400 0.401 83.99 6.461 103.1 0.047 57.92 0.428 64.08
1600 0.350 93.12 5.869 96.39 0.051 57.26 0.396 70.03
1800 0.313 102.0 5.256 90.46 0.054 57.37 0.369 75.33
2000 0.289 110.6 4.778 85.58 0.058 58.10 0.348 80.47
2200 0.278 118.5 4.394 81.16 0.062 57.66 0.336 85.37
2400 0.276 125.0 4.051 77.28 0.066 56.08 0.333 89.83
2600 0.286 131.9 3.793 74.34 0.072 60.98 0.316 92.61
2800 0.293 136.5 3.571 70.27 0.076 60.21 0.308 94.44
3000 0.287 141.6 3.326 67.39 0.083 61.36 0.272 99.52
P1-P3P4-P6P7-P9P10-P12

OM7601/BGA2012

Mfr. #:
Buy OM7601/BGA2012
Manufacturer:
NXP Semiconductors
Description:
EVAL BOARD FOR BGA2012
Lifecycle:
New from this manufacturer.
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