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IPD90N04S403ATMA1

P1-P3P4-P6P7-P9
IPD90N04S4-03
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C, V
GS
=10V
90 A
T
C
=100°C, V
GS
=10V
2)
90
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
360
Avalanche energy, single pulse
2)
E
AS
I
D
=45A
185 mJ
Avalanche current, single pulse
I
AS
-
90 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25°C
94 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
40 V
R
DS(on),max
3.2
mΩ
I
D
90 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD90N04S4-03 PG-TO252-3-313 4N0403
Rev. 1.0 page 1 2010-04-13
IPD90N04S4-03
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 1.6 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
---62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= 1mA
40 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=53µA
2.0 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=40V, V
GS
=0V,
T
j
=25°C
- 0.03 1 µA
V
DS
=18V, V
GS
=0V,
T
j
=85°C
2)
-120
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V, I
D
=90A
- 2.7 3.2
mΩ
Values
Rev. 1.0 page 2 2010-04-13
IPD90N04S4-03
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 4050 5260 pF
Output capacitance
C
oss
- 950 1230
Reverse transfer capacitance
C
rss
-3171
Turn-on delay time
t
d(on)
-14-ns
Rise time
t
r
-11-
Turn-off delay time
t
d(off)
-14-
Fall time
t
f
-15-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-2431nC
Gate to drain charge
Q
gd
-717
Gate charge total
Q
g
-5166
Gate plateau voltage
V
plateau
- 5.8 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 90 A
Diode pulse current
2)
I
S,pulse
- - 360
Diode forward voltage
V
SD
V
GS
=0V, I
F
=90A,
T
j
=25°C
- 0.9 1.3 V
Reverse recovery time
2)
t
rr
V
R
=20V, I
F
=50A,
di
F
/dt =100A/µs
-43-ns
Reverse recovery charge
2)
Q
rr
-44-nC
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 1.6K/W the chip is able to carry 130A at 25°C.
T
C
=25°C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=20V, V
GS
=10V,
I
D
=90A, R
G
=3.5Ω
V
DD
=32V, I
D
=90A,
V
GS
=0 to 10V
Rev. 1.0 page 3 2010-04-13
P1-P3P4-P6P7-P9

IPD90N04S403ATMA1

Mfr. #:
Buy IPD90N04S403ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Delivery:
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