IPD90N04S403ATMA1

IPD90N04S4-03
13 Avalanche energy 14 Drain-source breakdown voltage
E
AS
= f(T
j
) V
BR(DSS)
= f(T
j
); I
D
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 90 A pulsed
parameter: V
DD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
38
40
42
44
-55 -15 25 65 105 145
T
j
[°C]
V
BR(DSS)
[V]
8 V 32 V
0
1
2
3
4
5
6
7
8
9
10
0204060
Q
gate
[nC]
V
GS
[V]
90 A
45 A
22.5 A
0
50
100
150
200
250
300
350
400
25 75 125 175
T
j
[°C]
E
AS
[mJ]
Rev. 1.0 page 7 2010-04-13
IPD90N04S4-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2010-04-13
IPD90N04S4-03
Revision History
Version
Revision 1.0
Changes
Final Data Sheet
Date
13.04.2010
Rev. 1.0 page 9 2010-04-13

IPD90N04S403ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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