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BUK72150-55A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK72150-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 03 — 26 January 2011 3 of 13
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 55 V
V
DGR
drain-gate voltage R
GS
=20kΩ -55V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 3;
see Figure 1
-11A
T
mb
=100°C; V
GS
= 10 V; see Figure 1 -7A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
-44A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -36W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 11 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
=25°C - 44 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=11A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
-16mJ
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK72150-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 03 — 26 January 2011 4 of 13
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03np24
V
DS
(V)
1 10
2
10
10
1
10
2
I
D
(A)
10
−1
Limit R
DSon
= V
DS
/ I
D
DC
100 ms
10 ms
1 ms
t
p
= 10
μ
s
100
μ
s
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 4 --4.1K/W
R
th(j-a)
thermal resistance
from junction to
ambient
-71-K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03np25
t
p
(s)
10
−6
10
−1
110
−2
10
−3
10
−5
10
−4
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−2
t
p
t
p
T
P
t
T
δ =
single shot
0.2
0.1
0.05
0.02
δ = 0.5
BUK72150-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 03 — 26 January 2011 5 of 13
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 0.25 A; V
GS
=0V; T
j
=-55°C 50--V
I
D
= 0.25 A; V
GS
=0V; T
j
=25°C 55--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9
234V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 9
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9
--4.4V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=55V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=5A; T
j
= 175 °C;
see Figure 10; see Figure 11
- - 300 mΩ
V
GS
=10V; I
D
=5A; T
j
=25°C;
see Figure 10
; see Figure 11
- 127 150 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=3A; V
DS
=44V; V
GS
=10V;
T
j
=25°C; see Figure 12
-5.5-nC
Q
GS
gate-source charge - 1 - nC
Q
GD
gate-drain charge - 2.7 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 13
- 242 322 pF
C
oss
output capacitance - 40 48 pF
C
rss
reverse transfer
capacitance
- 2535pF
t
d(on)
turn-on delay time V
DS
=25V; R
L
=2.7Ω; V
GS
=10V;
R
G(ext)
=5.6Ω; T
j
=25°C
-3-ns
t
r
rise time - 26 - ns
t
d(off)
turn-off delay time - 8 - ns
t
f
fall time V
DS
25 V; R
L
=2.7Ω; V
GS
=10V;
R
G(ext)
=5.6Ω; T
j
=25°C
-10-ns
L
D
internal drain
inductance
measured from drain to center of die ;
T
j
=25°C
-2.5-nH
L
S
internal source
inductance
measured from source lead to source
bond pad ; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=10A; V
GS
=0V; T
j
=25°C;
see Figure 14
- 1.25 1.5 V
t
rr
reverse recovery time I
S
=10A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-32-ns
Q
r
recovered charge - 50 - nC
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK72150-55A,118

Mfr. #:
Buy BUK72150-55A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
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