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BUK72150-55A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK72150-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 26 January 201
1
6 of 13
NXP Semiconductors
BUK72150-55A
N-channel T
renchMOS st
andard level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Transfer char
acteristics: drain curre
nt as a
function of gate-s
ource voltage; typical values
03np21
0
10
20
30
02
46
8
1
0
V
DS
(V
)
I
D
(A
)
Label
i
s V
GS
(V
)
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
20
16
14
12
03np20
80
120
160
200
51
0
1
5
2
0
V
GS
(V
)
R
DSon
(m
Ω
)
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03np19
0
2
4
6
8
10
0369
V
GS
(V
)
I
D
(A
)
T
j
= 25
°
C
T
j
= 175
°
C
BUK72150-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 26 January 201
1
7 of 13
NXP Semiconductors
BUK72150-55A
N-channel T
renchMOS st
andard level FET
Fig 9.
Gate-sour
ce threshold
voltage as a function
of
junction temperature
Fig 10.
Drain-source on-state resistanc
e as a function
of drain current; typical values
Fig 11.
Normalized drain-source on-state resistance
factor as a
function of junction
temperature
Fig 12.
Gate-source voltage as a function of gate
charge; typical values
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03np22
100
150
200
250
300
350
0
5
10
15
20
I
D
(A
)
R
DSon
(m
Ω
)
6
6.5
7
Label
i
s V
GS
(V
)
8
10
5.5
03ne89
0
0.
5
1
1.
5
2
-
60
0
60
120
180
T
j
(
°
C)
a
03np17
0
2
4
6
8
10
0246
Q
G
(n
C
)
V
GS
(V
)
V
DD
= 44 V
V
DD
= 14 V
BUK72150-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 26 January 201
1
8 of 13
NXP Semiconductors
BUK72150-55A
N-channel T
renchMOS st
andard level FET
Fig
13.
Inpu
t, output and reverse tr
ansfer capacitan
ces
as a function o
f drain-source v
oltage; typical
values
Fig 14.
Source current as a fu
nction of source-drain
voltage; typical values
03np2
3
0
200
400
600
10
−
2
10
−
1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
03np16
0
20
40
60
0
0.5
1
1
.5
2
2.5
V
SD
(V
)
I
S
(A
)
T
j
= 175
°
C
T
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK72150-55A,118
Mfr. #:
Buy BUK72150-55A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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