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DG9421EDV-T1-GE3

P1-P3P4-P6P7-P9P10-P11
DG9421E, DG9422E
www.vishay.com
Vishay Siliconix
S18-0592-Rev. A, 25-Jun-2018
1
Document Number: 75411
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1.7 , Low On Resistance, +12 V, +5 V, +3 V, ± 5 V,
SPST Switches
DESCRIPTION
The DG9421E and DG9422E are monolithic
single-pole-single-throw (SPST) analog switches. The
DG9421E has a normally closed function. The DG9422E has
a normally open function.
Processed with high density BiCMOS technology, the parts
achieve low resistance, fast switching speed, low power
dissipation, high -3dB bandwidth, and low voltage logic
control threshold.
The DG9421E and DG9422E operate on single and dual
supplies. Single supply voltage ranges from +3 V to +16 V
while dual supply operation is recommended with ± 3 V to
± 8 V. Each switch conducts equally well in both direction
when on, and blocks input voltages up to the supply levels
when off.
The low and flat on resistance over the full input signal
voltage range brings excellent linearity, reduces insertion
loss and signal distortion, makes them ideal for data
acquisition and programmable gain control applications.
These switch characters also make them ideal fit for audio
signal switch and reed relay replacement.
Operation temperature is specified from -40 °C to +85 °C.
The DG9421E and DG9422E are available in 6 lead TSSOP
packages.
BENEFITS
• Wide operation voltage range
• Low signal errors and distortion
• Fast switching time
• Simple interfacing
FEATURES
• 3 V to 16 V single supply or ± 3 thru ± 8 V dual
supply operation
• Low on resistance: 1.7 typical at 12 V
• 2.4 V logic compatible for control
• Bi-directional rail to rail signal switching
• Fast switching speed
• High bandwidth: 161 MHz
• Control logic input can be over V+
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
APPLICATIONS
• Automatic test equipment
• Data acquisition systems
• Meters and instruments
• Medical and healthcare systems
• Communication systems
• Audio and video signal routing
• Relay replacement
• Battery powered systems
• Computer peripherals
• Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Notes
• Logic “0” 0.8 V
• Logic “1” 2.4 V
• Switches shown for logic “0” input
Available
Available
IN
NC
GND
1
2
3
6
5
Top V ie w
V+
COM
V-
4
TSOP-6
Device Marking:
DG9421EDV = 4Mxxx
IN
NO
GND
1
2
3
6
5
Top V ie w
V+
COM
V-
4
TSOP-6
Device Marking:
DG9422EDV = 4Nxxx
TRUTH TABLE
LOGIC DG9421E DG9422E
0OnOff
1OffOn
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C 6-pin TSOP
DG9421EDV-T1-GE3
DG9422EDV-T1-GE3
DG9421E, DG9422E
www.vishay.com
Vishay Siliconix
S18-0592-Rev. A, 25-Jun-2018
2
Document Number: 75411
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Signals on NO, NC, COM exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 7 mW/°C above 25 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
V+ reference to V- -0.3 to +18
V
IN -0.3 to +18
V+ reference to GND -0.3 to +18
GND reference to V- -0.3 to +18
COM, NC, NO
a
(V-) - 0.3 V to (V+) + 0.3 V
or 50 mA, whichever occurs first
-
Continuous current (any terminal) 50
mA
Peak current, NO, NC or COM (pulsed at 1 ms, 10 % duty cycle) 100
Storage temperature -65 to +150 °C
Power dissipation (packages)
b
6-pin TSOP
c
570 mW
ESD / HBM JS-001 2000
V
ESD / CDM JS-002 2000
Latch up per JEDEC78 300 mA
SPECIFICATIONS
a
(Single supply 12 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, V- = 0 V, V
IN
= 2.4 V, 0.8 V
f
TEMP.
b
LIMITS
-40 °C to +85°C
UNIT
MIN.
d
TYP.
c
MAX.
d
Analog Switch
Analog signal range
a
V
ANALOG
Full 0 - 12 V
Drain-source
on-resistance
R
DS(on)
V+ = 10.8 V, V- = 0 V,
I
NO/NC
= 5 mA, V
COM
= 2 V / 9 V
Room - 1.7 2.7
Full - - 3.2
Switch off
leakage current
g
I
NO/NC(off)
V
COM
= 1 V / 11 V, V
NO/NC
= 11 V / 1 V
Room -1 ± 0.004 1
nA
Full -10 ± 1.06 10
I
COM(off)
Room -1 ± 0.004 1
Full -10 ± 0.23 10
Channel-on
leakage current
g
I
COM(on)
V
NO/NC
= V
COM
= 11 V / 1 V
Room -1 ± 0.002 1
Full -10 ± 0.454 10
Digital Control
Input current, V
IN
low I
IL
V
IN
under test = 0.8 V Full -1 0.001 1
μA
Input current, V
IN
high I
IH
V
IN
under test = 2.4 V Full -1 0.001 1
Dynamic Characteristics
Turn-on time
e
t
ON
R
L
= 300 , C
L
= 35 pF, V
S
= 5 V
Room - 28 36
ns
Full - - 41
Turn-off time
e
t
OFF
Room - 12 20
Full - - 22
Charge injection
e
QV
g
= 0 V, R
g
= 0 , C
L
= 1 nF Room - 19 - pC
Bandwidth
e
BW R
L
= 50 , C
L
= 5 pF Room - 161 - MHz
Off-isolation
e
OIRR R
L
= 50 , C
L
= 5 pF, f = 1 MHz Room - -58 - dB
Source off capacitance
e
C
NO/NC(off)
f = 1 MHz
Room - 34 -
pFDrain off capacitance
e
C
COM(off)
Room - 36 -
Channel on capacitance
e
C
COM(on)
Room - 68 -
Power Supplies
Positive supply current I+
V
IN
= 0 V or 12 V
Room - 0.001 1
μA
Full - - 5
Negative supply current I-
Room -1 -0.001 -
Full -5 - -
Ground current I
GND
Room -1 -0.001 -
Full -5 - -
DG9421E, DG9422E
www.vishay.com
Vishay Siliconix
S18-0592-Rev. A, 25-Jun-2018
3
Document Number: 75411
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS
a
(Dual supply ± 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, V- = -5 V, V
IN
= 2.4 V, 0.8 V
f
TEMP.
b
LIMITS
-40 °C to +85 °C
UNIT
MIN.
d
TYP.
c
MAX.
d
Analog Switch
Analog signal range
e
V
ANALOG
Full -5 - 5 V
Drain-source
on-resistance
R
DS(on)
V+ = 5 V, V- = 5 V
I
NO/NC
= 5 mA, V
COM
= ± 3.5 V
Room - 1.9 2.9
Full - - 3.4
Switch off
leakage current
g
I
NO/NC(off)
V+ = 5.5 V, V- = 5.5 V
V
COM
= ± 4.5 V, V
NO/NC
= 4.5 V
Room -1 ± 0.004 1
nA
Full -10 ± 1.012 10
I
COM(off)
Room -1 ± 0.003 1
Full -10 ± 0.188 10
Channel-on
leakage current
g
I
COM(on)
V+ = 5.5 V, V- = -5.5 V
V
NO/NC
= V
COM
= ± 4.5 V
Room -1 ± 0.002 1
Full -10 ± 0.425 10
Digital Control
Input current, V
IN
low
e
I
IL
V
IN
under test = 0.8 V Full -1 0.001 1
μA
Input current, V
IN
high
e
I
IH
V
IN
under test = 2.4 V Full -1 0.001 1
Dynamic Characteristics
Turn-on time t
ON
R
L
= 300 , C
L
= 35 pF, V
S
= ± 3.5 V
Room - 39 54
ns
Full - - 62
Turn-off time t
OFF
Room - 28 33
Full - - 42
Charge injection
e
QV
g
= 0 V, R
g
= 0 , C
L
= 1 nF Room - 57 - pC
Bandwidth
e
BW R
L
= 50 , C
L
= 5 pF Room - 179 - MHz
Off-isolation
e
OIRR R
L
= 50 , C
L
= 5 pF, f = 1 MHz Room - -58 - dB
Source off capacitance
e
C
NO/NC(off)
f = 1 MHz
Room - 34 -
pFDrain off capacitance
e
C
COM(off)
Room - 36 -
Channel on capacitance
e
C
COM(on)
Room - 68 -
Power Supplies
Positive supply current
e
I+
V
IN
= 0 V or 5 V
Room - 0.001 1
μA
Full - - 5
Negative supply current
e
I-
Room -1 -0.001 -
Full -5 - -
Ground current
e
I
GND
Room -1 -0.001 -
Full -5 - -
P1-P3P4-P6P7-P9P10-P11

DG9421EDV-T1-GE3

Mfr. #:
Buy DG9421EDV-T1-GE3
Manufacturer:
Vishay
Description:
Precision Low-Voltage, Low-Glitch CMOS Analog Switches
Lifecycle:
New from this manufacturer.
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