DG9421E, DG9422E
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Vishay Siliconix
S18-0592-Rev. A, 25-Jun-2018
5
Document Number: 75411
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Notes
a. Refer to PROCESS OPTION FLOWCHART
b. Room = 25 °C, full = as determined by the operating temperature suffix
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
e. Guaranteed by design, not subject to production test
f. V
IN
= input voltage to perform proper function
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test
SPECIFICATIONS
a
(Single supply 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V- = 0 V, V
IN
= 2.4 V, 0.4 V
f
TEMP.
b
LIMITS
-40 °C to +85 °C
UNIT
MIN.
d
TYP.
c
MAX.
d
Analog Switch
Analog signal range
e
V
ANALOG
Full 0 - 3 V
Drain-source
on-resistance
R
DS(on)
V+ = 2.7 V, V- = 0 V
I
NO/NC
= 5 mA, V
COM
= 0.5 V, 2.2 V
Room - 7.3 11.5
Full - - 18
Switch off
leakage current
g
I
NO/NC(off)
V+ = 3.3 V, V- = 0 V
V
NO/NC
= 1 V, 2 V, V
COM
= 2 V, 1 V
Room -1 ± 0.003 1
nA
Full -10 ± 0.9 10
I
COM(off)
Room -1 ± 0.0008 1
Full -10 ± 0.042 10
Channel-on
leakage current
g
I
COM(on)
V+ = 3.3 V, V- = 0 V
V
COM
= V
NO/NC
= 1 V, 2 V
Room -1 ± 0.0014 1
Full -10 ± 0.41 10
Digital Control
Input current, V
IN
low
e
I
IL
V
IN
under test = 0.4 V Full -1 0.001 1
μA
Input current, V
IN
high
e
I
IH
V
IN
under test = 2.4 V Full -1 0.001 1
Dynamic Characteristics
Turn-on time t
ON
R
L
= 300 , C
L
= 35 pF, V
S
= 1.5 V
Room - 124 215
ns
Full - - 222
Turn-off time t
OFF
Room - 58 101
Full - - 106
Charge injection
e
QV
g
= 0 V, R
g
= 0 , C
L
= 1 nF Room - 6 - pC
Off-isolation
e
OIRR R
L
= 50 , C
L
= 5 pF, f = 1 MHz Room - -58 - dB
Source off capacitance
e
C
NO/NC(off)
f = 1 MHz
Room - 36 -
pFDrain off capacitance
e
C
COM(off)
Room - 38 -
Channel on capacitance
e
C
COM(on)
Room - 70 -
