RT8208A/B
13
DS8208A/B-04 May 2011 www.richtek.com
For an up transition (from lower to higher VOUT) as shown
in Figure5, the Gx change affects Dx and causes FB to
drop below the 0.75V trip point. This quickly trips the FB
comparator regardless of whether DEM is active or not,
generating an UGATE on-time and a subsequent LGATE
will be turned on. At the end of the minimum off-time
(400ns), if FB is still below 0.75V then another UGATE
on-time is started. This sequence continues until the FB
pin exceeds 0.75V.
Figure 6. Output Voltage Up Transition
with Overshooting
If the VOUT change is significant, there can be several
consecutive cycle of UGATE on-time followed by minimum
LGATE time. This can cause a rapid increase in inductor
current: typically it takes only a few switching cycles for
inductor current to rise up to the current limit. At some
point the FB voltage will rise up to the 0.75V reference
and the UGATE pulses will cease, but the inductor s LI
2
energy must then flow into the output capacitor. This can
create a significant overshoot as shown in Figure6.
The overshooting can be approximated by the following
equation, where I
CL
is the current limit, V
FINAL
is the
desired set point for the final voltage, L is in μH and C
OUT
is in μF.
2
2
CL
MAX FIANL
OUT
IL
V = ( ) + V
C
⎛⎞
×
⎜⎟
⎜⎟
⎝⎠
The Overshoot eliminator (Patent Pending) prevents output
voltage overshooting after rapid changes of Gx. This results
in a gradual change from V
OUT(INITIAL)
to V
OUT(FINAL)
and
prevents the buildup of high inductor current and reducing
overshoot.
Current Limit Setting (OCP)
RT8208A/B has cycle-by-cycle current limiting control.
The current limit circuit employs a unique valley current
sensing algorithm. If the magnitude of the current sense
signal at CS is above the current limit threshold, the PWM
is not allowed to initiate a new cycle (Figure 7).in order to
provide both good accuracy and a cost effective solution,
the RT8208A/B supports temperature compensated
MOSFET R
DS(ON)
sensing. The CS pin should be
connected to GND through the trip voltage setting resistor,
R
CS
. The CS terminal source 10μA I
CS
current, and the
trip level is set to the CS trip voltage, V
CS
as in the following
equation.
(
)
CS CS
V(mV) = R(k) x 10A
μ
Ω
Inductor current is monitored by the voltage between the
PGND pin and the PHASE pin. So the PHASE pin should
be connected to the drain terminal of the low-side
MOSFET. I
CS
has temperature coefficient to compensate
the temperature dependency of the R
DS(ON)
. PGND is used
as the positive current sensing node. So PGND should
be connected to the source terminal of the bottom
MOSFET.
As the comparison is done during the OFF state, V
CS
sets the valley level of the inductor current. Thus, the
load current at over current threshold, I
LOAD_OC
, can be
calculated as follows ;
In an over current condition, the current to the load exceeds
the current to the output capacitor thus the output voltage
tends to fall. Eventually, it crosses the under-voltage
protection threshold and shutdown.
LGATE
Gx
FB
UGATE
V
OUT
GND
Initial V
OUT
Final V
OUT
Minimum
off-time
FB
Threshold
()
−×
×
××
CS Ripple
LOAD_OC
DS(ON)
IN OUT OUT
CS
DS(ON) IN
VI
I = +
R2
VV V
V
1
= +
R2Lf V
RT8208A/B
14
DS8208A/B-04 May 2011www.richtek.com
I
L
t
0
I
L, peak
I
LIM
I
Load
Figure 7. Valley Current Limit
Negative Over Current Limit (CCM Mode Only)
The RT8208A/B also supports cycle-by-cycle negative over
current limiting in CCM Mode only. The over-current limit
is set to be negative but is the same absolute value as
the positive over current limit. If output voltage continues
to rising, the low side MOSEFT stays on, thus inductor
current is reduced and reverses direction after it reaches
zero. When there is too much negative current in the
inductor, the low side MOSFET is turned off and the current
flows to VIN through the body diode of the high side
MOSFET. Because this protection limits current to
discharge the output capacitor, output voltage tends to
rise, eventually hitting the over-voltage protection threshold
and shutdown. In order to prevent false OVP from triggering,
the low side MOSFET is turned on again 400ns after it is
turned off. If the device hits the negative over-current
threshold again before output voltage is discharged to the
target level, the low side MOSFET is turned off and process
repeats. It ensures maximum allowable discharge
capability when output voltage continues to rise. On the
other hand, if the output is discharged to the target level
before negative current threshold is reached, the low side
MOSFET is turned off, the high side MOSFET is then
turn on, and the device resumes normal operation.
MOSFET Gate Driver (UGATE, LGATE)
The high-side driver is designed to drive high current, low
R
DS(ON)
N-MOSFET(s). When configured as a floating
driver, 5V bias voltage is delivered from VDDP supply. The
average drive current is proportional to the gate charge at
V
GS
= 5V times switching frequency. The instantaneous
drive current is supplied by the flying capacitor between
BOOT and PHASE pins. A dead time to prevent shoot
through is internally generated between high-side
MOSFET off to low side MOSFET on, and low-side
MOSFET off to high side MOSFET on. The low-side driver
is designed to drive high current, low R
DS(ON)
N-MOSFETs.
The internal pull-down transistor that drives LGATE low is
robust, with a 0.6Ω typical on resistance. A 5V bias voltage
is delivered from VDDP supply. The instantaneous drive
current is supplied by the flying capacitor between VDDP
and PGND.
For high current applications, some combinations of high
and low side MOSFETs might be encountered that will
cause excessive gate-drain coupling, which can lead to
efficiency-killing, EMI-producing shoot-through currents.
This is often remedied by adding a resistor in series with
BOOT, which increases the turn-on time of the high-side
MOSFET without degrading the turn-off time (Figure 8).
BOOT
UGATE
PHASE
R
V
IN
Figure 8. Reducing the UGATE Rise Time
Power Good Output (PGOOD)
The power good output is an open-drain output and requires
a pull-up resistor. When the output voltage is 25% above
or 10% below its set voltage, PGOOD will be pulled low. It
is held low until the output voltage returns to within these
tolerances once more. In soft-start, PGOOD is actively
held low and is allowed to transition high until soft-start is
over and the output reaches 93% of its set voltage. There
is a 2.5μs delay built into PGOOD circuitry to prevent
false transition.
When Gx changes state, PGOOD is immediately latched
into its present state for 32 clock cycle while VOUT and
FB are changed to the new level. After that the latch will
be disabled.
RT8208A/B
15
DS8208A/B-04 May 2011 www.richtek.com
POR, UVLO and Soft-Start
Power On Reset (POR) occurs when VDD rises above to
approximately 4.3V. after POR is triggered. And then, the
RT8208A/B will reset the fault latch and prepare the PWM
for operation. Below 4.1V (MIN), the VDD under voltage
lockout (UVLO) circuitry inhibits switching by keeping
UGATE and LGATE low. A built-in soft-start is used to
prevent surge current from power supply input after EN is
enabled. The maximum allowed current limit is segmented
in 4 steps: 25%, 50%, 75% and 100% during this period,
each step is 128 UGATE clks. The current limit steps can
eliminate the V
OUT
folded-back in the soft-start duration.
Output Over Voltage Protection (OVP)
The output voltage can be continuously monitored for over
voltage protection. When the output voltage exceeds 25%
of the its set voltage threshold, over voltage protection is
triggered and the low side MOSFET is latched on. This
activates the low side MOSFET to discharge the output
capacitor. The RT8208A/B is latched once OVP is
triggered and can only be released by VDD or EN power
on reset. There is 20μs delay built into the over voltage
protection circuit to prevent false transitions.
When Gx changes state, the OVP function is masked for
32 clock cycle while VOUT and FB are changed to the
new level. After that the mask will be disabled.
Output Under Voltage Protection (UVP)
The output voltage can be continuously monitored for under
voltage protection. When the output voltage is less than
70% of its set voltage threshold, under voltage protection
is triggered and then both UGATE and LGATE gate drivers
are forced low. In order to remove the residual charge on
the output capacitor during the under voltage period, if
PHASE is greater than 1V, the LGATE is forced high until
PHASE is lower than 1V. There is 2.5μs delay built into
the under voltage protection circuit to prevent false
transitions. During soft-start, the UVP blanking time is
512 UGATE clks.
When Gx changes state, the UVP function is masked for
32 clock cycle while VOUT and FB change to the new
level, after which the mask is disable.
Output Inductor Selection
The switching frequency (on-time) and operating point (%
ripple or LIR) determine the inductor value as follows :
(
)
×−
×
ON IN OUT
IR LOAD(MAX)
TVV
L =
LI
Where L
IR
is the ratio of peak-to-peak ripple current to the
maximum average inductor current. Find a low-pass
inductor having the lowest possible DC resistance that
fits in the allowed dimensions. Ferrite cores are often the
best choice, although powdered iron is inexpensive and
can work well at 200kHz. The core must be large enough
and not to saturate at the peak inductor current (I
PEAK
) :
⎡⎤
⎛⎞
×
⎢⎥
⎜⎟
⎝⎠
⎣⎦
IR
PEAK LOAD(MAX) LOAD(MAX)
L
I = I + I
2
Output Capacitor Selection
The output filter capacitor must have low enough Equivalent
Series Resistance (ESR) to meet output ripple and load-
transient requirements, yet have high enough ESR to
satisfy stability requirements. The output capacitance
must also be high enough to absorb the inductor energy
while transiting from full-load to no-load conditions without
tripping the overvoltage fault latch.
Although Mach Response
TM
DRV
TM
dual ramp valley mode
provides many advantages such as ease-of-use, minimum
external component configuration, and extremely short
response time, due to not employing an error amplifier in
the loop, a sufficient feedback signal needs to be provided
by an external circuit to reduce the jitter level. The required
signal level is approximately 15mV at the comparing point.
This generates V
Ripple
= (V
OUT
/ 0.75) x 15mV at the output
node. The output capacitor ESR should meet this
requirement.
Output Capacitor Stability
Stability is determined by the value of the ESR zero relative
to the switching frequency. The point of instability is given
by the following equation :
××
π
SW
ESR
OUT
f
1
f =
2 ESR C 4
Do not put high value ceramic capacitors directly across
the outputs without taking precautions to ensure stability.

RT8208AGQW

Mfr. #:
Manufacturer:
Description:
IC REG CTRLR BUCK 16WQFN
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New from this manufacturer.
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