OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

RT8208AGQW

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
RT8208A/B
4
DS8208A/B-04 May 2011www.richtek.com
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
PWM Controller
Quiescent Supply Current I
Q
VDD + VDDP, V
FB
= 0.8V -- -- 1250 μA
V
DD
+ V
DDP
-- 1 10
Shutdown Current I
SHDN
EN/DEM = GND −10 −1 --
μA
FB Reference Voltage V
REF
V
DD
= 4.5V to 5.5V 0.742 0.750 0.758 V
FB Input Bias Current V
FB
= 0.75V −1 0.1 1 μA
Output Voltage Range V
OUT
0.75 -- 3.3 V
To be continued
Recommended Operating Conditions (Note 4)
z Input Voltage, V
IN
---------------------------------------------------------------------------------------------------------- 4.5V to 26V
z Supply Voltage, V
DD
, V
DDP
---------------------------------------------------------------------------------------------- 4.5V to 5.5V
z Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 125°C
z Ambient Temperature Range --------------------------------------------------------------------------------------------
−40°C to 85°C
Absolute Maximum Ratings (Note 1)
z BOOT to GND -------------------------------------------------------------------------------------------------------------- −0.3V to 38V
z BOOT to PHASE ---------------------------------------------------------------------------------------------------------- −0.3V to 6V
z PHASE to GND
DC ----------------------------------------------------------------------------------------------------------------------------- –0.3V to 32V
< 20ns ----------------------------------------------------------------------------------------------------------------------- −8V to 38V
z UGATE to PHASE
DC----------------------------------------------------------------------------------------------------------------------------- –0.3V to 6V
< 20ns ----------------------------------------------------------------------------------------------------------------------- −5V to 7.5V
z LGATE to GND
DC ----------------------------------------------------------------------------------------------------------------------------- –0.3V to 6
< 20ns ----------------------------------------------------------------------------------------------------------------------- −2.5V to 7.5V
z VDD, VDDP, VOUT, EN/DEM, FB, PGOOD, TON to GND------------------------------------------------------- −0.3V to 6V
z CS to GND ------------------------------------------------------------------------------------------------------------------ −0.3V to 6V
z Power Dissipation, P
D
@ T
A
= 25°C
WQFN−16L 3x3 ------------------------------------------------------------------------------------------------------------ 1.471W
z Package Thermal Resistance (Note 2)
WQFN−16L 3x3, θ
JA
------------------------------------------------------------------------------------------------------ 68°C/W
WQFN−16L 3x3, θ
JC
------------------------------------------------------------------------------------------------------ 7.5°C/W
z Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------- 260°C
z Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C
z Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) ---------------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ------------------------------------------------------------------------------------------------------ 200V
(V
IN
= 15V, V
DD
= V
DDP
= 5V, T
A
= 25°C, unless otherwise specified)
RT8208A/B
5
DS8208A/B-04 May 2011 www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
D0 Pull-Down Resistance D0 to GND, G0 = 5V -- 10 -- Ω
D1 Pull-Down Resistance D1 to GND, G1 = 5V -- 10 --
Ω
On-Time
V
PHASE
= 12V, V
OUT
= 2.5V,
R
TON
= 250kΩ
336 420 504 ns
Minimum Off-Time 250 400 550 ns
VOUT Shutdown Discharge
Resistance
EN/DEM = GND -- 20 -- Ω
Current Sensing
Current Limiter Source Current CS to GND 9 10 11 μA
Current Comparator Offset −10 -- 10 mV
Zero Crossing Threshold PHASE to GND, EN/DEM = 5V −10 -- 5 mV
Fault Protection
GND to PHASE, V
CS
= 50mV 40 50 60
Current Limit (Threshold)
GND to PHASE, V
CS
= 200mV 190 200 210
mV
Current Limit Setting Range CS to GND 50 -- 200 mV
Output UV Threshold UVP Detection 60 70 80 %
OVP Threshold V
FB_OVP
OVP Detection 120 125 130 %
OV Fault Delay FB forced above OV threshold -- 20 -- μs
Rising edge, PWM disabled below
this level
4.1 4.3 4.5 V
VDD Under Voltage Lockout
Threshold
Hysteresis -- 80 -- mV
Current Limit Step Duration at
Soft-Start
Each step -- 128 -- clks
UVP Blanking Time From EN signal going high -- 512 -- clks
Thermal Shutdown T
SH DN
-- 155 -- °C
Thermal Shutdown Hysteresis -- 10 -- °C
Driver On-Resistance
UGATE Drive Source R
UGATEsr
BOOT to PHASE = 5V -- 2 5 Ω
UGATE Drive Sink R
UGATEsk
BOOT to PHASE = 5V -- 1 5
Ω
LGATE Drive Source R
LGATEsr
LGATE, High State -- 1 5 Ω
LGATE Drive Sink R
LGATEsk
LGATE, Low State -- 0.5 2.5
Ω
UGATE Gate Driver Source/Sink
Current
UGATE to PHASE = 2.5V,
BOOT to PHASE = 5V
-- 1 -- A
LGATE Gate Driver Source
Current
LGATE forced to 2.5V -- 1 -- A
LGATE Gate Driver Sink Current LGATE forced to 2.5V -- 3 -- A
LGATE Rising (Phase = 1.5V) -- 30 --
Dead Time
UGATE Rising -- 30 --
ns
Internal Boost Charging Switch
On-Resistance
VDDP t o BOOT, 10mA -- -- 80 Ω
To be continued
RT8208A/B
6
DS8208A/B-04 May 2011www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
Logic I/O
EN/DEM Low -- -- 0.8
EN/DEM High 2.9 -- --
EN/DEM Logic Input Voltage
EN/DEM Floating -- 2 --
V
G0 Low -- -- 0.8
G0 Logic Input Voltage
G0 High 2 -- --
V
G1 Low -- -- 0.8
G1 Logic Input Voltage
G1 High 2 -- --
V
EN/DEM = VDD -- 1 5
EN/DEM = 0 −5 1 -- Logic Input Current
G0 = G1 = VDD or GND −1 -- 5
μA
PGOOD
V
FB
with respect to Reference,
PGOOD from Low to High
87 90 93
V
FB
with respect to Reference,
PGOOD from High to Low
-- 125 --
PGOOD Threshold
Hysteresis -- 3 --
%
Fault Propagation Delay
Falling edge, FB forced below PGOOD
trip threshold
-- 2.5 -- μs
Output Low Voltage I
SINK
= 1mA -- -- 0.4 V
Leakage Current High state, forced to 5V -- -- 1 μA
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θ
JA
is measured in the natural convection at T
A
= 25°C on a four layers high effective thermal conductivity test board of
JEDEC 51-7 thermal measurement standard. The case point of θ
JC
is on the expose pad for the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

RT8208AGQW

Mfr. #:
Buy RT8208AGQW
Manufacturer:
Description:
IC REG CTRLR BUCK 16WQFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet