RT8208A/B
10
DS8208A/B-04 May 2011www.richtek.com
Application Information
The RT8208A/B is a constant-on-time PWM controller
which provides four resistor-programmable DC output
voltages by controlling the G0 and G1 digital input. The
output voltage is programmable from 0.75V to 3.3V. The
constant on-time PWM control scheme handles wide input/
output rations with ease and providing 100ns instant-on
response to load steps while maintaining a relatively
constant operating frequency and inductor operating point
over a wide range of input voltages. The topology
circumvents the poor load transient timing problems of
fixed-frequency current mode PWMs while avoiding the
problems caused by widely varying switching frequencies
in conventional constant-on-time and constant off-time
PWM schemes. The DRV
TM
mode PWM modulator is
specifically designed to have better noise immunity for
such a single output application.
PWM Operation
The Mach Response
TM
, DRV
TM
mode controller relies on
the output filter capacitor s effective series resistance
(ESR) to act as a current-sense resistor, so the output
ripple voltage provides the PWM ramp signal. Refer to the
function diagrams of the RT8208A/B, the synchronous
high-side MOSFET is turned on at the beginning of each
cycle. After the internal one-shot timer expires, the
MOSFET is turned off. The pulse width of this one shot is
determined by the converter s input and output voltages
to keep the frequency fairly constant over the input voltage
range. Another one-shot sets a minimum off-time (400ns
typ.).
On-Time Control (t
ON
)
The on-time one-shot comparator has two inputs. One
input monitors the output voltage, while the other input
samples the input voltage and converts it to a current.
This input voltage proportional current is used to charge
an internal on-time capacitor. The on-time is the time
required for the voltage on this capacitor to charge from
zero volts to VOUT, thereby making the on-time of the
high-side switch directly proportional to output voltage and
inversely proportional to input voltage. The implementation
results in a nearly constant switching frequency without
the need of a clock generator.
t
ON
= 9.6p x R
TON
x (V
OUT
+ 0.1) / (V
IN
0.3) + 50ns
Although this equation provides a good approximation to
start with, the accuracy depends on each design and
selection of the high side MOSFET.
And then the switching frequency (f) is:
R
TON
is a resistor connected from the PHASE to TON pin.
Mode Selection (EN) Operation
The EN pin enables the supply. When EN/DEM is tied to
VDD, the controller is enabled and operates in diode-
emulation mode. When the EN pin is floating, the
RT8208A/B will operate in forced-CCM mode.
Diode-Emulation Mode (EN = High)
In diode-emulation mode, the RT8208A/B automatically
reduces switching frequency at light-load conditions to
maintain high efficiency. This reduction of frequency is
achieved smoothly and without increasing VOUT ripple or
load regulation. As the output current decreases from
heavy-load condition, the inductor current is also reduced,
and eventually comes to the point that its valley touches
zero current, which is the boundary between continuous
conduction and discontinuous conduction modes. By
emulating the behavior of diodes, the low side MOSFET
allows only partial of negative current when the inductor
freewheeling current reach negative. As the load current
is further decreased, it takes longer and longer to discharge
the output capacitor to the level than requires the next
ON cycle. The on-time is kept the same as that in the
heavy-load condition. In reverse, when the output current
increases from light load to heavy load, the switching
frequency increases to the preset value as the inductor
current reaches the continuous condition. The transition
load point to the light-load operation can be calculated as
follows (Figure 1) :
≈×
IN OUT
LOAD ON
(V V )
I t
2L
where t
ON
is On-time.
×
OUT
IN
ON
V
f =
Vt
RT8208A/B
11
DS8208A/B-04 May 2011 www.richtek.com
Figure 1. Boundary Condition of CCM/DEM
I
L
t
0
t
ON
Slope = (V
IN
-V
OUT
) / L
i
L, peak
i
Load
= i
L, peak
/ 2
The switching waveforms may appear noisy and
asynchronous when light loading causes diode-emulation
operation, but this is a normal operating condition that
results in high light-load efficiency. Trade-offs in DEM noise
vs. light-load efficiency is made by varying the inductor
value. Generally, low inductor values produce a broader
efficiency vs. load curve, while higher values result in higher
full-load efficiency (assuming that the coil resistance
remains fixed) and less output voltage ripple. The
disadvantages for using higher inductor values include
larger physical size and degraded load-transient response
(especially at low input voltage levels).
Forced-CCM Mode (EN = floating)
The low noise, forced-CCM mode (EN=floating) disables
the zero-crossing comparator, which controls the low side
switch on-time. This causes the low side gate drive
waveform to become the complement of the high side
gate-drive waveform. This in turn causes the inductor
current to reverse at light loads as the PWM loop to
maintain a duty ratio VOUT/VIN. The benefit of forced-
CCM mode is to keep the switching frequency fairly
constant, but it comes at a cost: The no-load battery
current can be up to 10mA to 40mA, depending on the
external MOSFETs.
Output Voltage Setting (FB)
The output voltage can be adjusted from 0.75V to 3.3V by
setting the feedback resistor R1 and R2, see Figure 2.
With G0 and G1 in low state, the output voltage is at the
lowest value. Choose R2 to be approximately 20kΩ, and
solve for R1 using the equation :
⎛⎞
×
⎜⎟
⎝⎠
OUT REF
R1
V = V 1+
R2
where V
REF
is 0.75V in typical.
PHASE
LGATE
V
OUT
V
IN
UGATE
VOUT
GND
G1
G0
R1
R2
FB
Figure 2. Setting V
OUT
with a Resistor Divider
Output Voltage Transition Control
The RT8208A/B provides two digital control input G0 and
G1 to allow selection among four output voltages. The
output voltage is regulated by comparing the FB pin
(connected to VOUT via an external resistor divider) to
the internal 0.75V reference. The G0 and G1 digital input
control the gate of internal respective MOSFET whose
drain is connected to D0 and D1 respectively. Using Gx,
the user controls whether Dx is grounded or open, which
then controls the resistor divider ratio for V
OUT
. A logic
high signal on Gx will connect Dx to ground.
When the Gx input changes state, this change quickly
causes three actions:
1. D0 changes state.
2. The power good PGOOD output is temporarily latched
into its present state. This prevents chattering or false
tripping while V
OUT
moves to the new level.
3. When the Gx changes state whether DEM is set or
not, then enter the PWM mode and counts 32 clock
cycles. For the duration of 32 clock cycles, the OVP
and UVP function is masked. This behavior allows the
output to slew down to the new level without tripping
the OVP or UVP function when the Gx change causes
rapid change of Dx, which in turns cause a rapid change
at FB.
Output voltage is regulated through the FB pin via resistors
R1 through R4 as shown in Figure 3.
RT8208A/B
12
DS8208A/B-04 May 2011www.richtek.com
Figure 3. Output Voltage Selection By G0 and G1 Input
The following table shows the equations for VOUT as a
function of digital control input G0 and G1.
RT8208A RT8208B
G0 G1 G0 G1
Output Voltage Equation
0 0 1 1
OUT
R1+R2
V = x 0.75
R2
1 0 0 1
OUT
R1+(R2//R3)
V = x 0.75
(R2//R3)
0 1 1 0
OUT
R1+(R2//R4)
V = x 0.75
(R2//R4)
1 1 0 0
OUT
R1+(R2//R3//R4)
V = x 0.75
(R2//R3//R4)
Note that the R
DS(ON)
of the internal MOSFET is in series
with external resistor, which adds typically 10Ω in series.
Output Voltage Transition Operation
The digital input control pin Gx allows VOUT to transition
to both higher and lower values. For a down transition, the
rapid change Gx from high to low as sudden release either
of external resistors (R3 or R4) will cause FB to go above
the 0.75V threshold. At this time, the LGATE will drive
high to turn on the low side MOSFET and draw current
from the output capacitor via the inductor. LGATE will
remain on until FB falls to 0.75V, at which point a normal
UGATE switching cycle begins, see Figure4. For a down
transition, the low side MOSFET stays on before FB
reaches to 0.75V, thus the negative inductor current will
be increased. If the negative current is too large to trigger
NOCP, the low side MOSFET is turned off which can avoid
too much negative current to damage component. Refer
to the Negative Over Current Limit section for a full
description.
Gx
GND
FB
LGATE
UGATE
V
OUT
Initial
V
OUT
Final
V
OUT
Figure 4. Output Voltage Down Transition
Figure 5. Output Voltage Up Transition
LGATE
Gx
FB
UGATE
V
OUT
GND
Initial V
OUT
Final V
OUT
Minimum
off-time
FB
Threshold
GND
FB
D1
D0
R2
R1
R3
R4
V
OUT
0.75V
G0
G1
Control
Logic
TON
GND
FB
D1
D0
R2
R1
R3
R4
V
OUT
G0
G1
Control
Logic

RT8208BGQW

Mfr. #:
Manufacturer:
Description:
IC REG CTRLR BUCK 16WQFN
Lifecycle:
New from this manufacturer.
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