OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BYV32E-150,127

P1-P3P4-P6P7-P9P10-P10
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV32E-150
Dual rugged ultrafast rectifier diode, 20 A, 150 V
Rev. 04 — 2 March 2009 Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak
reverse voltage
- - 150 V
I
O(AV)
average output
current
square-wave pulse; δ = 0.5;
T
mb
≤ 115 °C; both diodes
conducting; see Figure 1
;
see Figure 2
--20A
I
RRM
repetitive peak
reverse current
t
p
=2µs; δ =0.001 --0.2A
V
ESD
electrostatic
discharge voltage
HBM; C = 250 pF; R = 1.5
kΩ; all pins
--8kV
Dynamic characteristics
t
rr
reverse recovery
time
I
F
=1A; V
R
=30V;
dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
see Figure 5
- 2025ns
I
R
=0.5A; I
F
=1A;
T
j
= 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
- 1020ns
Static characteristics
V
F
forward voltage I
F
=8A; T
j
=150°C; see
Figure 4
- 0.72 0.85 V
BYV32E-150_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 2 March 2009 2 of 9
NXP Semiconductors
BYV32E-150
Dual rugged ultrafast rectifier diode, 20 A, 150 V
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
SOT78
( TO-220AB ; S C - 4 6 )
2 K cathode
3 A2 anode 2
mb K mounting base; cathode
12
mb
3
sym125
A2A1
K
Table 3. Ordering information
Type number Package
Name Description Version
BYV32E-150 TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
P1-P3P4-P6P7-P9P10-P10

BYV32E-150,127

Mfr. #:
Buy BYV32E-150,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers RAIL REC-EPI
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet