BYV32E-150_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 2 March 2009 3 of 9
NXP Semiconductors
BYV32E-150
Dual rugged ultrafast rectifier diode, 20 A, 150 V
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-150V
V
RWM
crest working reverse
voltage
-150V
V
R
reverse voltage DC - 150 V
I
O(AV)
average output current square-wave pulse; δ = 0.5; T
mb
≤ 115 °C; both
diodes conducting; see Figure 1
; see Figure 2
-20A
I
FRM
repetitive peak forward
current
δ = 0.5; t
p
= 25 µs; T
mb
≤ 115 °C; per diode - 20 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; sine-wave pulse; T
j(init)
=25°C; per
diode
-125A
t
p
= 8.3 s; sine-wave pulse; T
j(init)
=25°C; per
diode
-137A
I
RRM
repetitive peak reverse
current
δ = 0.001; t
p
=2µs - 0.2 A
I
RSM
non-repetitive peak
reverse current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
01284
003aac978
4
8
12
0
1.9
a = 1.57
2.2
2.8
4.0
I
F(AV)
(A)
P
tot
(W)
015105
003aac979
5
10
15
0
0.5
0.2
0.1
I
F(AV)
(A)
P
tot
(W)
δ = 1
