NX3P2902B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 22 February 2018 4 of 15
NXP Semiconductors
NX3P2902B
Logic controlled high-side power switch
9. Recommended operating conditions
10. Thermal characteristics
[1] The overall R
th(j-a)
can vary depending on the board layout. To minimize the effective R
th(j-a)
, all pins must have a solid connection to
larger Cu layer areas e.g. to the power and ground layer. In multi-layer PCB applications, the second layer should be used to create a
large heat spreader area right below the device. If this layer is either ground or power, it should be connected with several vias to the top
layer connecting to the device ground or supply. Try not to use any solder-stop varnish under the chip.
[2] Rely on the measurement data given for a rough estimation of the R
th(j-a)
in the application. The actual R
th(j-a)
value may vary in
applications using different layer stacks and layouts.
11. Static characteristics
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
I
input voltage 1.1 3.6 V
T
amb
ambient temperature 40 +85 C
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient
[1][2]
130 K/W
Table 8. Static characteristics
V
I(VIN)
= 0.9 V to 3.6 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +85 C Unit
Min Typ Max Min Max
V
IH
HIGH-level
input voltage
EN input
V
I(VIN)
= 1.1 V to 1.3 V - - - 1.0 - V
V
I(VIN)
= 1.3 V to 1.8 V - - - 1.2 - V
V
I(VIN)
= 1.8 V to 3.6 V - - - 1.2 - V
V
IL
LOW-level
input voltage
EN input
V
I(VIN)
= 1.1 V to 1.3 V - - - - 0.3 V
V
I(VIN)
= 1.3 V to 1.8 V - - - - 0.4 V
V
I(VIN)
= 1.8 V to 3.6 V - - - - 0.45 V
I
I
input leakage
current
V
I(EN)
= 0 V or 3.6 V - 0.1 - - 500 nA
I
GND
ground current V
I(EN)
= 0 V or 3.6 V; VOUT open;
see Figure 5 and Figure 6
--- 2-A
I
S(OFF)
OFF-state
leakage
current
V
I(VIN)
= 3.6 V; V
I(EN)
= GND;
V
I(VOUT)
= GND; see Figure 8
- 10 - - 600 nA
R
dch
discharge
resistance
VOUT output; V
I(VIN)
= 3.3 V - 90 - - 120
