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NX3P2902BUKZ

P1-P3P4-P6P7-P9P10-P12P13-P15
NX3P2902B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 22 February 2018 7 of 15
NXP Semiconductors
NX3P2902B
Logic controlled high-side power switch
11.3 ON resistance test circuit and waveforms
R
ON
= V
SW
/ I
LOAD
.
Fig 9. Test circuit for measuring ON resistance
001aao350
EN
V
IH
VIN VOUT
GND
I
LOAD
V
I
V
SW
I
LOAD
= 100 mA.
(1) V
I(VIN)
= 1.2 V.
(2) V
I(VIN)
= 1.8 V.
(3) V
I(VIN)
= 3.6 V.
V
I(EN)
= V
I(VIN)
; T
amb
= 25 C.
(1) I
LOAD
= 10 mA.
(2) I
LOAD
= 100 mA.
(3) I
LOAD
= 250 mA.
(4) I
LOAD
= 350 mA.
(5) I
LOAD
= 500 mA.
Fig 10. ON resistance versus temperature Fig 11. ON resistance versus input voltage
Tamb (°C)
-40 1108020 50-10
001aao351
120
80
160
200
R
ON
(mΩ)
40
(1)
(2)
(3)
001aao352
V
I(VIN)
(V)
1.2 3.62.82.0
120
80
160
200
R
ON
(mΩ)
40
(1)
(2)
(3)
(4)
(5)
NX3P2902B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 22 February 2018 8 of 15
NXP Semiconductors
NX3P2902B
Logic controlled high-side power switch
12. Dynamic characteristics
[1] Typical values are measured at T
amb
= 25 C.
Table 10. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 12
and
Figure 13.
Symbol Parameter Conditions T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max
t
en
enable time EN to VOUT; see Figure 14
V
I(VIN)
= 1.8 V 175 310 - s
V
I(VIN)
=3.3V 80 135 - s
t
dis
disable time EN to VOUT; see Figure 14
V
I(VIN)
=1.8V - 10 - s
V
I(VIN)
=3.3V - 8 - s
t
on
turn-on time EN to VOUT; see Figure 14 and Figure 15
V
I(VIN)
= 1.8 V 285 570 - s
V
I(VIN)
= 3.3 V 150 280 - s
t
off
turn-off time EN to VOUT; see Figure 16 and Figure 17
V
I(VIN)
=1.8V - 200 - s
V
I(VIN)
=3.3V - 180 - s
t
TLH
LOW to HIGH
output
transition
time
VOUT
V
I(VIN)
= 1.8 V 110 265 - s
V
I(VIN)
=3.3V 70 150 - s
t
THL
HIGH to LOW
output
transition
time
VOUT
V
I(VIN)
=1.8V - 190 - s
V
I(VIN)
=3.3V - 172 - s
NX3P2902B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 22 February 2018 9 of 15
NXP Semiconductors
NX3P2902B
Logic controlled high-side power switch
12.1 Waveforms and test circuits
Measurement points are given in Table 11.
Logic level: V
OH
is the typical output voltage that occurs with the output load.
Fig 12. Switching times
W
RII
*1'
9
0
9
;
9
<
9
2+
*1'
W
RQ
W
7/+
W
7+/
W
HQ
W
GLV
,
Table 11. Measurement points
Supply voltage EN Input Output
V
I(VIN)
V
M
t
r
, t
f
V
M
V
X
V
Y
1.1 V to 3.6 V 0.5 V
I(EN)
100 ns 0.5 V
OH
0.9 V
OH
0.1 V
OH
Test data is given in Table 12.
Definitions test circuit:
R
L
= Load resistance.
C
L
= Load capacitance including jig and probe capacitance.
V
EXT
= External voltage for measuring switching times.
Fig 13. Test circuit for measuring switching times
DDD
(1
9287 9,1
9
(;7
*
&
/
5
/
9
,
Table 12. Test data
Supply voltage EN Input Load
V
EXT
V
I(EN)
C
L
R
L
1.1 V to 3.6 V 1.8 V 1 F 500
P1-P3P4-P6P7-P9P10-P12P13-P15

NX3P2902BUKZ

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Buy NX3P2902BUKZ
Manufacturer:
NXP Semiconductors
Description:
Power Switch ICs - Power Distribution Logic controlled Hi side power switch
Lifecycle:
New from this manufacturer.
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