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2N6284G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 4
1 Publication Order Number:
2N6284/D
2N6284 (NPN); 2N6286,
2N6287 (PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These packages are designed for general−purpose amplifier and
low−frequency switching applications.
Features
• High DC Current Gain @ I
C
= 10 Adc −
h
FE
= 2400 (Typ) − 2N6284
= 4000 (Typ) − 2N6287
• Collector−Emitter Sustaining Voltage −
V
CEO(sus)
= 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6286
2N6284/87
V
CEO
80
100
Vdc
Collector−Base Voltage
2N6286
2N6284/87
V
CB
80
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous
Peak
I
C
20
40
Adc
Base Current I
B
0.5 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
160
0.915
W
W/°C
Operating and Storage Temperature
Range
T
J
, T
stg
−65 to + 200 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.09 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N628x = Device Code
x = 4, 6 or 7
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
2N628xG
AYYWW
MEX
Device Package Shipping
ORDERING INFORMATION
2N6284 TO−3 100 Units/Tray
2N6284G TO−3
(Pb−Free)
100 Units/Tray
2N6286 TO−3 100 Units/Tray
2N6286G TO−3
(Pb−Free)
100 Units/Tray
2N6287 TO−3 100 Units/Tray
2N6287G TO−3
(Pb−Free)
100 Units/Tray
COLLECTOR
CASE
BASE
1
EMITTER 2
2
1
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
2
25 50 100 125 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
160
60
40
140
0 75 150
0
20
80
100
120
175
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted) (Note 2)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 0.1 Adc, I
B
= 0) 2N6286
2N6284, 2N6287
V
CEO(sus)
80
100
−
−
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
−
−
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
C
= 150_C)
I
CEX
−
−
0.5
5.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 2.0 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
(I
C
= 20 Adc, V
CE
= 3.0 Vdc)
h
FE
750
100
18,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 40 mAdc)
(I
C
= 20 Adc, I
B
= 200 mAdc)
V
CE(sat)
−
−
2.0
3.0
Vdc
Base−Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
V
BE(on)
− 2.8 Vdc
Base−Emitter Saturation Voltage
(I
C
= 20 Adc, I
B
= 200 mAdc)
V
BE(sat)
− 4.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
|h
fe
| 4.0 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) 2N6284
2N6286, 2N6287
C
ob
−
−
400
600
pF
Small−Signal Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
h
fe
300 − −
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
3
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
7.0
2.0
1.0
0.7
0.5
0.1
0.3 0.7 3.0 20
0.2
1.0 5.0
0.3
3.0
5.0
0.5 2.0 7.0
0
V
CC
- 30 V
SCOPE
TUT
+ 4.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25 ms
D
1
51
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
2
APPROX
+ 8.0 V
V
1
APPROX
- 12 V
[ 8.0 k [ 50
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
R
B
10
t
d
@ V
BE(off)
= 0 V
t
f
t
s
t
r
2N6284 (NPN)
2N6287 (PNP)
V
CC
= 30 Vdc
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3 3.0 30 300
P1-P3P4-P6P7-P7

2N6284G

Mfr. #:
Buy 2N6284G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 20A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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