2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
4
ACTIVE−REGION SAFE OPERATING AREA
50
Figure 5. 2N6284, 2N6287
20
2.0
0.05
50 100
0.2
5.0
0.5
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0 5.0 2010
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
SINGLE PULSE
T
J
= 200°C
dc
5.0 ms
1.0 ms
0.5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
< 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
1.0
Figure 6. Small−Signal Current Gain
f, FREQUENCY (kHz)
10
2.0 5.0 10 20 50 100 200 1000
500
100
5000
h
FE
, SMALL-SIGNAL CURRENT GAIN
20
200
500
2000
1000
50
T
J
= 25°C
V
CE
= 3.0 Vdc
I
C
= 10 A
1000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
100
1.0 2.0 5.0 20 10010
C, CAPACITANCE (PF)
500
300
200
C
ib
C
ob
500.2 0.5
2N6284 (NPN)
2N6287 (PNP)
T
J
= 25°C
700
2N6284 (NPN)
2N6287 (PNP)
