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LC05111C02MTTTG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
1 Publication Order Number :
LC05111CMT/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
November 2016 - Rev. 3
ORDERING INFORMATION
See detailed ordering and shipping information on page 17 of this data sheet.
LC05111CMT
Overview
The LC05111CMT is a protection IC for 1-cell lithium-ion secondary
batteries with integrated power MOS FET. Also it integrates highly
accurate detection circuits and detection delay circuits to prevent batteries
from over-charging, over-discharging, over-current discharging and
over-current charging.
A battery protection system can be made by only LC05111CMT and few
external parts.
Feature
Charge-and-discharge power MOSFET are integrated at Ta = 25C, V
CC
= 4.5V
ON resistance (total of charge and discharge) 11.2m (typ)
Highly accurate detection voltage/current at Ta = 25C, V
CC
= 3.7V
Over-charge detection ±25mV
Over-discharge detection ±50mV
Charge over-current detection ±0.7A
Discharge over-current detection ±0.7A
Delay time for detection and release (fixed internally)
Discharge/Charge over-current detection is compensated for temperature dependency of power FET
0V battery charging : “Permission”
Auto wake-up function battery charging : “Permission”
Over charge detection voltage : 4.0V to 4.5V (5mV steps)
Over charge release hysteresis : 0V to 0.3V (100mV steps)
Over discharge detection voltage : 2.2V to 2.7V (50mV steps)
Over discharge release hysteresis at Auto wake-up : 0V to 0.6V (200mV steps)
Over discharge release hysteresis : 0V to 0.075V (25mV steps)
Discharge over current detection : 2.0A to 8.0A (0.5A steps)
Charge over current detection : 8.0A to -2.0A (0.5A steps)
Typical Applications
Lithium ion battery protection
CMOS LSI
1-Cell Lithium-Ion Battery
Protection IC with integrated
Power MOS FET
WDFN6 2.6x4.0, 0.65P, Dual Flag
LC05111CMT
www.onsemi.com
2
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Conditions Ratings Unit
Supply voltage
V
CC
Between PAC+ and V
CC
: R1=680
0.3 to +12.0
V
S1 - S2 voltage VS1-S2 24.0 V
CS terminal Input voltage
CS
V
CC
24.0
V
Charge or discharge current BAT-, PAC- 10.0 A
TST Input voltage TST
0.3 to +7.0
V
Storage temperature Tstg
55 to +125 C
Current between S1 and
S2(DC)
ID
V
CC
= 3.7V
10.0 A
Current between S1 and S2
(continuous pulse)
IDP
Pulse Width<10s, duty cycle<1%
35 A
Operating ambient temperature Topr
40 to +85 C
A
llowable power dissipation Pd
Glass epoxy four-layer board.
Board size 27.4mm x 3.1mm x 0.8mm
450 mW
Junction temperature Tj 125
C
Caution 1) Absolute maximum ratings represent the values which cannot be exceeded even for a moment.
Caution 2) If you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature
change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of
decrease reliability. Please contact us for a confirmation.
Example of Application Circuit
Components
Recommended
value
MAX unit Description
R1 680 1k
R2 1k 2k
C1
0.1 1.0
F
* We don’t guarantee the characteristics of the circuit shown above.
* TST pin would be better to be connected to VSS pin, though it is connected to VSS with internal resistor (100k typ).
* Battery voltage drop occurs, a current of about 60uA flow period of 1.5V-1.3V.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
LC05111CMT
www.onsemi.com
3
Electrical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Detection voltage
Over-charge detection voltage Vov
R1=680
25C
Vov_set -25 Vov_set Vov_set +25
mV
30 to 70C
Vov_set -30 Vov_set Vov_set +30
Over-charge release voltage Vovr
R1=680
25C
Vovr_set -40 Vovr_set Vovr_set +40
mV
30 to 70C
Vovr_set -70 Vovr_set Vovr_set +70
Over-discharge detection
voltage
Vuv
R1=680
25C
Vuv_set -50 Vuv_set Vuv_set +50
mV
30 to 70C
Vuv_set -80 Vuv_set Vuv_set +80
Over-discharge release voltage Vuvr
R1=680
CS=0V
25C
Vuvr_set -100 Vuvr_set Vuvr_set +100
mV
30 to 70C
Vuvr_set -120 Vuvr_set Vuvr_set +120
Over-discharge release
voltage2
Vuvr2
R1=680
CS=open
25C
Vuvr2_set -100 Vuvr2_set Vuvr2_set +100
mV
30 to 70C
Vuvr2_set -120 Vuvr2_set Vuvr2_set +120
Discharge over-current
detection current
Ioc
R2=1k
25C
V
CC
=3.7V
Ioc_set -0.7 Ioc_set Ioc_set +0.7
A
30 to 70C
V
CC
=2.6 to 4.3V
Ioc_set -1.2 Ioc_set Ioc_set +1.2
Discharge over-current
release current
Iocr
R2=1k
25C
V
CC
=3.7V
(Ioc_set-0.7) (Ioc_set) (Ioc_set+0.7)
A
30 to 70C
V
CC
=2.6 to 4.3V
(Ioc_set-1.2) (Ioc_set) oc_set+1.2)
Discharge over-current
detection current(Short circuit)
Ioc2
R2=1k
25C
V
CC
=3.7V
Ioc2_set*0.8 Ioc2_set Ioc2_set*1.2
A
Charge over-current
detection current
Ioch
R2=1k
25C
V
CC
=3.7V
Ioch_set -0.7 Ioch_set Ioch_set +0.7
A
30 to 70C
V
CC
=2.6 to 4.3V
Ioch_set -1.2 Ioch_set Ioch_set +1.2
Charge over-current
release current
Iochr
R2=1k
25C
V
CC
=3.7V
Ioch_set -0.7 Ioch_set Ioch_set +0.7
A
30 to 70C
V
CC
=2.6 to 4.3V
Ioch_set -1.2 Ioch_set Ioch_set +1.2
Input voltage
Operating Voltage for 0V
charging
Vchg
V
CC
-CS
V
CC
-GND
=0V
25C
1.4 V
Current consumption
Operating current Icc
At normal
state
25C
VCC=3.7V
3 6
A
Stand-by current Istb
At
Stand-by
state
25C
VCC=2.0V
0.95
A
Auto
wake-up
=enable
Continued on next page.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

LC05111C02MTTTG

Mfr. #:
Buy LC05111C02MTTTG
Manufacturer:
ON Semiconductor
Description:
Battery Management 1 CELL LIB PROTECTION IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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