LC05111CMT
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4
Continued from preceding page.
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resistance
ON resistance 1 of
Ron1
V
CC
=3.1V
25C
10.4 13 18.2
m
integrated power MOS FET I=±2.0A
ON resistance 2 of
Ron2
V
CC
=3.7V
25C
9.6 12 15.6
m
integrated power MOS FET I=±2.0A
ON resistance 3 of
Ron3
VCC=4.0V
25C
9.2 11.6 15
m
integrated power MOS FET I=±2.0A
ON resistance 4 of
Ron4
V
CC
=4.5V
25C
8.8 11.2 14
m
integrated power MOS FET I=±2.0A
Internal resistance (V
CC
-CS)
Rcsu
V
CC
=Vuv
_set
CS=0V
25C
300
k
Internal resistance (V
SS
-CS)
Rcsd
V
CC
=3.7V
CS=0.1V
25C
15
k
Detection and Release delay time
Over-charge detection delay
time
Tov
25C
0.8 1 1.2
sec
30 to 70C
0.6 1 1.5
Over-charge release delay time Tovr
25C
12.8 16 19.2
ms
30 to 70C
9.6 16 24
Over-discharge detection delay
time
Tuv
25C
16 20 24
ms
30 to 70C
12 20 30
Over-discharge release delay
time
Tuvr
25C
0.9 1.1 1.3
ms
30 to 70C
0.6 1.1 1.5
Discharge over-current
detection delay time 1
Toc1
V
CC
=3.7V
25C
9.6 12 14.4
ms
30 to 70C
7.2 12 18
Discharge over-current
release delay time 1
Tocr1
V
CC
=3.7V
25C
3.2 4 4.8
ms
30 to 70C
2.4 4 6
Discharge over-current
detection delay time 2 (Short
circuit)
Toc2
V
CC
=3.7V
25C
280 400 560
s
30 to 70C
180 400 800
Charge Over-current
detection delay time
Toch
V
CC
=3.7V
25C
12.8 16 19.2
ms
30 to 70C
9.6 16 24
Charge Over-current
release delay time
Tochr
V
CC
=3.7V
25C
3.2 4 4.8
ms
30 to 70C
2.4 4 6
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
LC05111CMT
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5
SELECTION GUIDE
Device Vov(V) Vovr(V) Vuv(V) Vuvr(V) Vuvr2(V) AWUP Ioc(A) Ioch(A) Ioc2(A) 0Vcharge
LC05111C01MTTTG
4.425 4.225 2.500 2.500 2.900 enable 6.00 4.00 17.5 enable
LC05111C02MTTTG
4.280 4.180 2.700 2.700 2.900 enable 6.00 3.50 21.5 enable
LC05111C03MTTTG
4.425 4.225 2.600 2.600 3.000 enable 6.00 4.00 17.5 enable
LC05111C04MTTTG
4.375 4.175 2.400 2.400 2.800 enable 6.15 6.25 17.5 enable
LC05111C05MTTTG
4.425 4.225 2.300 2.300 2.700 enable 4.00 4.00 17.5 enable
LC05111C06MTTTG
4.425 4.225 2.400 2.400 2.800 enable 6.00 4.00 17.5 enable
LC05111C07MTTTG
4.425 4.225 2.500 2.520 2.900 enable 5.00 5.00 17.5 enable
LC05111C08MTTTG
4.430 4.430 2.400 2.450 2.800 enable 5.00 5.00 17.5 enable
LC05111C09MTTTG
4.400 4.200 2.400 2.400 3.000 enable 6.00 4.00 17.5 enable
LC05111C10MTTTG
4.280 4.080 2.600 2.600 3.000 enable 6.00 4.00 17.5 enable
LC05111C11MTTTG
4.310 4.110 2.500 2.500 2.900 enable 2.00 2.00 17.5 enable
LC05111C12MTTTG
4.450 4.450 2.600 2.600 3.000 enable 4.0 3.0 15.0 enable
LC05111C13MTTTG
4.240 4.140 2.700 2.700 2.900 enable 3.0 2.5 15.0 enable
LC05111C14MTTTG
4.445 4.245 2.600 2.600 3.000 enable 4.0 4.0 17.5 enable
LC05111C15MTTTG
4.280 4.080 2.700 2.700 3.100 enable 5.2 2.9 17.5 enable
LC05111C16MTTTG
4.470 4.270 2.500 2.500 2.900 enable 5.7 5.7 15 enable
Pdmax-Ta graph
LC05111CMT
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6
Recommended board layout
Board schematic
Board size L=27.4mm W=3.1 mm H=0.8mm glass-epoxy 4layers
All layer
Top layer
2
nd
layer
3
rd
layer
4
th
layer
PACK+
PACK-
27.4mm
3.1mm

LC05111C02MTTTG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Battery Management 1 CELL LIB PROTECTION IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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