BUL146G, BUL146FG
http://onsemi.com
6
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
h
FE
, FORCED GAIN
T
C
, CROSS-OVER TIME (ns)
3
130
h
FE
, FORCED GAIN
Figure 13. Inductive Fall Time
T
fi
, FALL TIME (ns)
Figure 14. Inductive Cross−Over Time
I
C
, COLLECTOR CURRENT (AMPS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
Figure 17. Forward Bias Power Derating
110
60
515
250
150
50
100
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7
6
0
0 200
1,0
0,8
0,2
0,0
20
T
C
, CASE TEMPERATURE (°C)
80 140 160
1
0.01
3
600 800
4
100 1000
DC (BUL146)
5 ms
V
BE(off)
T
C
≤ 125°C
I
C
/I
B
≥ 4
L
C
= 500 mH
POWER DERATING FACTOR
0,6
0,4
67891011121314
70
80
90
100
120
I
C
= 3 A
I
C
= 1.3 A
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
T
J
= 25°C
T
J
= 125°C
35 154 67891011121314
200
100
I
C
= 3 A
I
C
= 1.3 A
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
T
J
= 25°C
T
J
= 125°C
10
0.1
1 ms
10 ms 1 ms
400
2
1
4
5
0 V
-1, 5 V
-5 V
40 60 100 120
SECOND BREAKDOWN
DERATING
THERMAL DERATING
GUARANTEED SAFE OPERATING AREA INFORMATION
There are two limitations on the power handling ability of a tran-
sistor: average junction temperature and second breakdown. Safe
operating area curves indicate I
C
− V
CE
limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on T
C
= 25°C; T
J(pk)
is variable depending on
power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
C
> 25°C. Second break-
down limitations do not derate the same as thermal limitations. Al-
lowable current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
T
J(pk)
may be calculated from the data in Figure 20. At any case tem-
peratures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second break-
down. For inductive loads, high voltage and current must be sus-
tained simultaneously during turn−off with the base−to−emitter
junction reverse−biased. The safe level is specified as a reverse−
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an ava-
lanche mode.
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
EXTENDED
SOA
