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BC846DS,115

P1-P3P4-P6P7-P9P10-P12P13-P13
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 3 of 12
NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT457 (SC-74)
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aab621
200
300
100
400
500
P
tot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 250 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 328 K/W
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 4 of 12
NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
7. Characteristics
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab622
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0
0.20
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-basecut-off
current
V
CB
=50V; I
E
=0A --15nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--5µA
I
EBO
emitter-base cut-off
current
V
EB
=6V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V
I
C
=10µA - 280 -
I
C
= 2 mA 200 300 450
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - 55 100 mV
I
C
= 100 mA; I
B
= 5 mA - 200 300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - 755 850 mV
I
C
= 100 mA; I
B
= 5 mA - 1000 - mV
V
BE
base-emitter voltage V
CE
=5V
I
C
= 2 mA 580 650 700 mV
I
C
= 10 mA - - 770 mV
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 5 of 12
NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 1.9 - pF
C
e
emitter capacitance V
EB
= 0.5 V; I
C
=i
c
=0A;
f=1MHz
-11-pF
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f = 100 MHz
100 - - MHz
NF noise figure V
CE
=5V; I
C
= 0.2 mA;
R
S
=2kΩ;
f = 10 Hz to 15.7 kHz
- 1.9 - dB
V
CE
=5V; I
C
= 0.2 mA;
R
S
=2kΩ; f = 1 kHz;
B = 200 Hz
- 3.1 - dB
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4. Per transistor: Collector current as a function
of collector-emitter voltage; typical values
006aaa533
200
400
600
h
FE
0
I
C
(mA)
10
−2
10
3
10
2
10
−1
101
(3)
(1)
(2)
006aaa532
V
CE
(V)
0108462
0.08
0.12
0.04
0.16
0.20
I
C
(A)
0
I
B
(mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
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BC846DS,115

Mfr. #:
Buy BC846DS,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR
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