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BC846DS,115

P1-P3P4-P6P7-P9P10-P12P13-P13
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 12
NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
V
CE
=5V; T
amb
=25°CI
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6. Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
=5V; T
amb
=25°C
Fig 7. Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
006aaa536
0.6
0.8
1
V
BE
(V)
0.4
I
C
(mA)
10
−1
10
3
10
2
110
006aaa534
I
C
(mA)
10
−1
10
3
10
2
110
0.5
0.9
1.3
0.3
0.7
1.1
V
BEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10
−1
10
V
CEsat
(V)
10
−2
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aaa537
I
C
(mA)
110
2
10
10
2
10
3
f
T
(MHz)
10
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 7 of 12
NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 9. Per transistor: Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
V
CB
(V)
0108462
006aab620
2
4
6
C
c
(pF)
0
006aaa539
V
EB
(V)
0642
9
11
7
13
15
C
e
(pF)
5
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 8 of 12
NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 11. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BC846DS SOT457 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 -165
P1-P3P4-P6P7-P9P10-P12P13-P13

BC846DS,115

Mfr. #:
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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR
Lifecycle:
New from this manufacturer.
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