CM1230-08CP

© Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 4
1 Publication Order Number:
CM1230/D
CM1230
2, 4, and 8-Channel
Low-Capacitance ESD
Protection Array
Product Description
The CM1230 is a family of 2, 4 and 8 channel, very low capacitance
ESD protection diode arrays in a CSP form factor. It is ideal for
protecting systems with high data and clock rates or for circuits that
need low capacitive loading. Each channel consists of a pair of ESD
diodes that act as clamp diodes to steer ESD current pulses to either the
positive or negative supply rail. A Zener diode is integrated between the
positive and negative supply rails. The V
CC
rail is protected from ESD
strikes and eliminates the need for a bypass capacitor to absorb positive
ESD strikes to ground. Each channel can safely dissipate ESD strikes of
±8 kV, meeting the Level 4 requirement of the IEC6100042
international standard as well as ±15 kV air discharges per the
IEC6100042 specification. Using the MILSTD883 (Method
3015) specification for Human Body Model (HBM) ESD, the pins are
protected for contact discharges at greater than ±15 kV.
This device is wellsuited for next generation wireless handsets that
implement highspeed serial interface solutions for the LCD display
and camera interfaces. In these designs, a tolerance above 1.5 pF
cannot be tolerated when high data rates are transferred between the
baseband choppiest and the LCD driver/controller Is. Higher
capacitive loading normally causes the rise and fall times to slow
which hampers the functionality of circuit and operation of the
wireless handset. The CM1230 incorporates OptiGuardt which
results in improved reliability at assembly. The CM1230 is available in
a spacesaving, low profile Chip Scale Package with
RoHScompliant, leadfree finishing.
Features
Two, Four, and Eight Channels of ESD Protection
Provides ESD Protection to IEC6100042 Level 4
±8 kV Contact Discharge & ±15 kV Air Discharge
Low Loading Capacitance of 0.8 pF Typical
Minimal Capacitance Change with Temperature and Voltage
Channel I/O to GND Capacitance Difference of 0.02 pF Typical is
Ideal for Differential Signals
Channel I/O to I/O Capacitance 0.15 pF Typical
Zener Diode Protects Supply Rail and Eliminates the Need for
External Bypass Capacitors
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
Available in 4, 6 and 10 Bump Chip Scale Packages (CSP)
OptiGuardt Coated for Improved Reliability at Assembly
These Devices are PbFree and are RoHS Compliant
Applications
I/O Port Protection for Mobile Handsets, Notebook Computers,
DSCs, MP3 Players, PDAs, etc. Including USB, 1394 and Serial ATA
LCD and Camera Data Lines in Wireless Handsets that
use Highspeed Serial Interfaces
Wireless Handsets
Handheld PCs/PDAs
LCD and Camera Modules
CSP6
(PbFree)
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
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CSP4
(PbFree)
3,500/Tape & ReelCM123002CP
(Note 1)
CSP4
(PbFree)
3,500/Tape & ReelCM1230J2CP
(Note 1)
3,500/Tape & ReelCM123004CP
Lxxx = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
WLCSP4
CP SUFFIX
CASE 567CS
L30 MG
G
CSP4
L MG
G
CSP10
L308 MG
G
CSP6
CSP10
(PbFree)
3,500/Tape & ReelCM123008CP
WLCSP10
CP SUFFIX
CASE 567BG
WLCSP6
CP SUFFIX
CASE 567BB
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Standard test condition is IEC6100042 level 4 test
circuit with each (A
OUT
/B
OUT
) pin subjected to
±12 kV contact discharge for 1000 pulses. Dis-
charges are timed at 1 second intervals and all 1000
strikes are completed in one continuous test run.
1. CM123002CP and CM1230J2CP are the same
mechanical package. Only difference is the Pin 1
orientation (‘+’ mark) on the tape and reel.
CM1230
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2
ELECTRICAL SCHEMATIC
V
P
V
N
CH1
CM123002CP/
CM1230J2CP
CH2
CH4 V
P
V
N
CH3
CH1 CH2
CM123004CP
CM123008CP
CH8 V
P
CH2CH1 CH4CH3
CH7 CH6 CH5
V
N
Table 1. PIN DESCRIPTIONS
2Channel, 4Bump CSP
Pin Name Type Description
A1 V
N
GND Negative Voltage Supply Rail
B1 CH2 I/O ESD Channel
A2 CH1 I/O ESD Channel
B2 V
P
PWR Positive Voltage Supply Rail
4Channel, 6Bump CSP
Pin Name Type Description
A1 CH1 I/O ESD Channel
B1 CH2 I/O ESD Channel
A2 V
P
PWR Positive Voltage Supply Rail
B2 V
N
GND Negative Voltage Supply Rail
A3 CH3 I/O ESD Channel
B3 CH4 I/O ESD Channel
8Channel, 10Bump CSP
Pin Name Type Description
A1 CH1 I/O ESD Channel
B1 CH2 I/O ESD Channel
A2 CH3 I/O ESD Channel
B2 CH4 I/O ESD Channel
A3 V
P
PWR Positive Voltage Supply Rail
B3 V
N
GND Negative Voltage Supply Rail
A4 CH5 I/O ESD Channel
B4 CH6 I/O ESD Channel
A5 CH7 I/O ESD Channel
B5 CH8 I/O ESD Channel
B5 B4 B3 B2 B1
A5 A4 A3 A2 A1
PACKAGE / PINOUT DIAGRAMS
Top View
(Bumps Down View)
L308
Orientation
Marking
+
Bottom View
(Bumps Up View)
CM123008
10bump CSP Package
A1
1 2 3 4 5
A
B
Orientation
Marking
B3 B2 B1
A3 A2 A1
L30
Orientation
Marking
+
A1
1 2 3
A
B
Orientation
Marking
CM123004
6bump CSP Package
B2 B1
A2 A1
L
+
A1
1 2
A
B
CM123002/J2
4bump CSP Package
Orientation
Marking
Orientation
Marking
CM1230
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3
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (V
P
V
N
) 6.0 V
Operating Temperature Range –40 to +85 °C
Storage Temperature Range –65 to +150 °C
DC Voltage at any Channel Input (V
N
0.5) to (V
P
+ 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range –40 to +85 °C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note2)
Symbol Parameter Conditions Min Typ Max Units
V
P
Operating Supply Voltage (V
P
V
N
) 3.3 5.5 V
I
P
Operating Supply Current (V
P
V
N
) = 3.3 V 8.0
mA
V
F
Diode Forward Voltage
Top Diode
Bottom Diode
I
F
= 8 mA; T
A
= 25°C
0.60
0.60
0.80
0.80
0.95
0.95
V
I
LEAK
Channel Leakage Current T
A
= 25°C; V
P
= 5 V, V
N
= 0 V, V
IN
= 0 V to 5 V ±0.1 ±1.0
mA
C
IN
Channel Input Capacitance At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V 0.80 1.2 pF
DC
IN
Channel Input Capacitance Matching At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V 0.02 pF
C
MUTUAL
Mutual Capacitance between signal pin
and adjacent signal pin
At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V 0.15 pF
V
ESD
Insystem ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 6100042 standard
b) Human Body Model,
MILSTD883, Method 3015
T
A
= 25°C (Notes 4 and 5)
T
A
= 25°C (Notes 3 and 5)
±8
±15
kV
V
CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T
A
= 25°C, I
PP
= 1A, t
P
= 8/20 mS
(Note 5)
+9.8
–1.8
V
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
I
PP
= 1 A, t
P
= 8/20 mS
Any I/O pin to Ground (Note 5)
0.76
0.56
W
2. All parameters specified at T
A
= –40°C to +85°C unless otherwise noted.
3. Human Body Model per MILSTD883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 KW, V
P
= 3.3 V, V
N
grounded.
4. Standard IEC 6100042 with C
Discharge
= 150 pF, R
Discharge
= 330 W, V
P
= 3.3 V, V
N
grounded.
5. These measurements performed with no external capacitor on V
P
.
6. Measured under pulsed conditions, pulse width = 0.7 ms, maximum current = 1.5 A.

CM1230-08CP

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 8-CH PICO GUARD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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