NXP Semiconductors
PMCXB1000UE
30 V, complementary N/P-channel Trench MOSFET
PMCXB1000UE All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 27 June 2016 13 / 20
T
j
(°C)
-60 1801200 60
aaa-017225
1.0
0.5
1.5
2.0
a
0
Fig. 24. TR2: Normalized drain-source on-state
resistance as a function of ambient
temperature; typical values
T
j
(°C)
-60 1801200 60
aaa-017226
-0.5
-1.0
-1.5
V
GS(th)
(V)
0
(1)
(2)
(3)
I
D
= -250 μA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 25. TR2: Gate-source threshold voltage as a
function of junction temperature
aaa-017227
V
DS
(V)
-10
-1
-10
2
-10-1
10
10
2
C
(pF)
1
(1)
(2)
(3)
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig. 26. TR2: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
Q
G
(nC)
0 0.80.60.2 0.4
aaa-017228
-2
-3
-1
-4
-5
V
GS
(V)
0
V
DS
= -15 V; I
D
= -410 mA T
amb
= 25 °C
Fig. 27. TR2: Gate-source voltage as a function of gate
charge; typical values
